Shin-etsu Chemical Co., Ltd.

Matsushita Electric Industrial Co., Ltd.

International Business Machines Corporation

Panasonic Corporation

Hitachi-kokusai Electric Inc.

Matsushita Electric Co., Ltd.

Yoshitaka Hamada

Fujio Yagihashi

Masaru Sasago

Hideo Nakagawa

Takeshi Asano

Motoaki Iwabuchi

Tsutomu Ogihara

Mutsuo Nakashima

Shigeru Mori

Katsuya Takemura

Motoo Fukushima

Takafumi Ueda

Kazumi Noda

Kazuhiro Hirahara

Dirk Pfeiffer

Kunio Itoh

Mikio Aramata

Takeshi Kinsho

Takeru Watanabe

Shoji Ichinohe

Robert C West

Eiichi Tabei

Toshihiko Fujii

Masaki Kasashima

Yasunori Morinaga

Hironobu Miya

Naoki Yamakawa

Atsuhiko Suda

Seizi Katayama

Takeshi Anaso

Masaki Kasahima

A conductive circuit is formed by printing a pattern of an ink composition and curing the pattern. The ink composition is a substantially solvent-free, liquid, addition curable, ink composition comprising (A) an organopolysiloxane having at least two alkenyl groups, (B) an organohydrogenpolysiloxane having at least two SiH groups, (C) conductive particles having an average particle size &#x2267;5 &#x3bc;m, (D) conductive micro-particles having an average particle size &#x3c;5 &#x3bc;m, (E) a thixotropic agent, and (F) a hydrosilylation catalyst.

Formation of conductive circuit, conductive circuit, and conductive ink composition

A silicone resin composition is provided comprising a silicon base polymer obtained from dehydration reaction of a silicon base monomer comprising at least 70 mol % of a hydrolyzable silane compound (A). The hydrolyzable silane compound (A) has at least a pair of silicon atoms linked by a linking group which is an aliphatic hydrocarbon group or an aromatic ring-containing hydrocarbon group, and having attached thereto at least three substituent groups selected from hydrogen, hydroxyl and hydrolyzable groups. A proportion of aromatic structure-containing substituent groups is up to 30 mol % of the entire silicon-bonded substituent groups. The composition is suited to form an optical material.

Silicone resin composition and optical material

An organic silane compound for forming a Si-containing film by plasma CVD is provided. The silane compound contains 2 or more silicon atoms bonded by an intervening straight chain or branched oxygen-containing hydrocarbon chain having 4 to 8 carbon atoms containing a bond represented by C&#x2014;O&#x2014;Cwherein p and q independently represent number of carbon atoms with the proviso that 2&#x2266;p&#x2266;6 and 2&#x2266;q&#x2266;6 and the carbon chains do not contain an unsaturated bond which conjugates with the oxygen atom, wherein all of the 2 or more silicon atoms has 1 or more hydrogen atom or an alkoxy group having 1 to 4 carbon atoms.

Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film

Provided is a preparation process of trisilylamine capable of preparing high-purity trisilylamine more easily at a lower cost. More specifically, provided is a preparation process of trisilylamine, comprising a step of thermally decomposing perhydropolysilazane under an oxygen-free or low oxygen atmosphere.

Preparation process of trisilylamine

A high-temperature bonding composition comprising a silicon base polymer as a thermosetting binder is provided. The silicon base polymer is obtained from dehydrolytic condensation of a condensate precursor comprising a silane compound having at least one pair of silicon atoms tied by a crosslink composed of an aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group, and having at least three hydroxyl and/or hydrolyzable groups. Those silicon atoms having a direct bond to the crosslink composed of the aliphatic hydrocarbon, heterocyclic or aromatic hydrocarbon group are present in a proportion of at least 90 mol % relative to all silicon atoms in the polymer.

High-temperature bonding composition, substrate bonding method, and 3-D semiconductor device

A pair of substrates each having a bonding surface are joined together by interposing a bond layer precursor coating between the bonding surfaces of the substrates and heating the precursor coating to form a bond layer. Prior to the joining step, the substrate on the bonding surface is provided with a gas-permeable layer. Even when a material which will evolve a noticeable volume of gas upon heat curing is used as the precursor coating, substrates can be joined via a robust bond without the peeling problem by gas evolution.

Substrate joining method and 3-D semiconductor device

In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.

Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing

Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.

Semiconductor device producing method and substrate processing apparatus

The invention provides a preparation process of organic-group-modified zeolite fine particles excellent in stability of particle size and to be used for electronic materials or the like. The preparation process comprises a first step of obtaining a liquid containing zeolite seed crystals having a particle size of 80 nm or less which are formed in the presence of a structure directing agent, a second step of adding an organic-group-containing hydrolyzable silane compound to the liquid obtained by the first step, and a third step of maturing the liquid of the second step at temperature higher than that of the first step. A dispersion liquid of zeolite fine particles obtained by the process.

Process for preparing a dispersion liquid of zeolite fine particles

In the invention, a silica sol prepared by hydrolyzing and condensing a silane compound represented by the following formula: Si(OR)or RSi(OR)wherein Rs, R(s) and R(s) may be the same or different when a plurality of them are contained in the molecule and each independently represents a linear or branched Calkyl group in the presence of a hydrophilic basic catalyst and a hydrophobic basic catalyst is used for a conventional porous-film forming composition.

Method for forming insulating film with low dielectric constant

Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.

Organic silicon oxide core-shell particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing a fluorinated norbornane group, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

Resist composition and patterning process using the same

Provided is a positive resist material, particularly a chemically amplified positive resist material having higher sensitivity, higher resolution, a higher exposure latitude and better process adaptability than conventional positive resist materials, and providing a good pattern profile after exposure, particularly having lessened line edge roughness and exhibiting excellent etching resistance. These materials may contain, preferably an organic solvent and acid generator, more preferably a dissolution inhibitor or a basic compound and/or a surfactant. Provided is a positive resist material comprising a polymer comprising at least one monomer unit selected from a group consisting of a monomer unit (A), a monomer unit (B) and a monomer unit (C) represented by the following formula (1); and having a glass transition temperature (Tg) of 100&#xb0; C. or greater. 

Positive resist material and pattern formation method using the same

Silicon compounds having fluorinated hemiacetal structure are provided. Silicone resins having the same structure have an appropriate acidity to enable formation of a finer pattern by minimizing the pattern collapse by swelling, exhibit improved resistance to the etching used in the pattern transfer to an organic film, and are thus suited for use in resist compositions for the bilayer process.

Fluorinated cyclic structure-bearing silicon compounds and silicone resins, resist compositions using the same, and patterning process

A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

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Joetsu, Japan

Yoshitaka Hamada