Jsr Corporation

Ihi Corporation

Yoshio Takimoto

Toru Kimura

Masayuki Motonari

Shin-ya Nakafuji

Kazunori Takanashi

Goji Wakamatsu

Naoya Nosaka

Yuushi Matsumura

Tsubasa Abe

Takashi Mori

Masayoshi Ishikawa

Gouji Wakamatsu

Hiromitsu Tanaka

Satoru Murakami

Kyoyu Yasuda

Shinya Nakafuji

Shunsuke Kurita

Junya Suzuki

Takashi Okada

Yutaka Watanabe

Takeshi Endo

Hiroyuki Ochiai

Hisashi Nakagawa

Tatsuya Sakai

Shinya Minegishi

Shin-ya Minegishi

Kazuo Nakahara

Fumihiro Toyokawa

Yushi Matsumura

Kazuhiko Komura

Kazunori Sakai

Satoshi Dei

Masayuki Miyake

Tomoaki Seko

Takaaki Uno

Tomoharu Kawazu

Shun Aoki

Masaharu Yano

Kazuhiko Koumura

Katsuhisa Mizoguchi

Kiyoshi Fujikake

Junta Fuchiwaki

Masaki Moritsugu

A chemical structure generating device according to the present invention includes a generator and a controller. The generator produces a product list including one or more compounds, based on a reactant list including one or more compounds and a chemical reaction list. The controller applies the product list as a new reactant list to the generator, updates a database having at least one list of the reactant list and the product list, and allows the generator to produce a new product list based on the new reactant list and the chemical reaction list.

Chemical structure generating device, chemical structure generating program, and chemical structure generating method

A composition for resist underlayer film formation contains a compound having a group represented by formula (1), and a solvent. Rrepresents an organic group having 2 to 10 carbon atoms and having a valency of (m+n), wherein the carbon atoms include two carbon atoms that are adjacent to each other, with a hydroxy group or an alkoxy group bonding to one of the two carbon atoms, and with a hydrogen atom bonding to another of the two carbon atoms; Lrepresents an ethynediyl group or a substituted or unsubstituted ethenediyl group; Rrepresents a hydrogen atom or a monovalent organic group having 1 to 20 carbon atoms; n is an integer of 1 to 3; * denotes a bonding site to a moiety other than the group represented by the formula (1) in the compound; and m is an integer of 1 to 3. 

Composition for resist underlayer film formation, resist underlayer film and forming method thereof, production method of patterned substrate, and compound

The composition for film formation includes a compound including a group of the formula (1) and a solvent. In the formula (1), Rto Reach independently represent a hydrogen atom, a monovalent organic group having 1 to 20 carbon atoms, or Rto Rtaken together represent a cyclic structure having 3 to 20 ring atoms together with the carbon atom or a carbon chain to which Rto Rbond. Arrepresents a group obtained by removing (n+3) hydrogen atoms from an aromatic ring of an arene having 6 to 20 carbon atoms. n is an integer of 0 to 9. Rrepresents a hydroxy group, a halogen atom, a nitro group, or a monovalent organic group having 1 to 20 carbon atoms. 

Composition for film formation, film, resist underlayer film-forming method, production method of patterned substrate, and compound

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing the silicon-containing film with a basic aqueous solution. The pattern-forming method does not include, after the forming of the silicon-containing film and before the removing of the silicon-containing film, treating the silicon-containing film with a treatment liquid comprising an acid or a fluorine compound. The silicon-containing film is preferably formed a hydrolytic condensation product of a composition containing a compound represented by formula (1) in an amount of no less than 60 mol % with respect to total silicon compounds. X represents a halogen atom or &#x2014;OR, and Rrepresents a monovalent organic group.SiX&#x2003;&#x2003;(1)

Pattern-forming method

A composition includes a compound including a partial structure represented by formula (1), and solvent. In the formula (1), Xand Xeach independently represent a substituted or unsubstituted ring structure having 4 to 10 ring atoms constituted taken together with the spiro carbon atom and the carbon atoms of the aromatic ring adjacent to Xor X; n1 and n2 are each independently an integer of 0 to 2; and the sum of k1 and k2 are each independently an integer of 1 to 8, wherein the sum of k1 and k2 is no less than 2 and no greater than 16. The compound is preferably represented by formula (2). The sum of k1 and k2 in the formula (1) is preferably no less than 3. 

Composition, method for producing patterned substrate, film and forming method thereof, and compound

An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a &#x3b2;-diketone, a &#x3b2;-keto ester, a &#x3b2;-dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), Rrepresents an organic group having a valency of n. X represents &#x2014;OH, &#x2014;COOH, &#x2014;NCO or &#x2014;NHR, wherein Rrepresents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4.RX)&#x2003;&#x2003;(1)

Inorganic film-forming composition for multilayer resist processes, and pattern-forming method

A pattern-forming method comprises: forming a resist underlayer film on an upper face side of a substrate; forming a silicon-containing film on an upper face side of the resist underlayer film; and removing at least a part of the resist underlayer film and at least a part of the silicon-containing film with a basic aqueous solution. Preferably, the pattern-forming method further comprises, after the forming of the silicon-containing film and before the removing of the resist underlayer film and the silicon-containing film, forming a resist pattern on an upper face side of the silicon-containing film, and etching the silicon-containing film using the resist pattern as a mask.

Pattern-forming method, resin, and composition

A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450&#xb0; C. and 800&#xb0; C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500&#xb0; C. or higher and 600&#xb0; C. or lower.

Method for film formation, and pattern-forming method

A pattern-forming method includes applying an inorganic film-forming composition on an upper face side of a substrate to provide an inorganic film, forming a resist pattern on an upper face side of the inorganic film; and dry-etching once or several times using the resist pattern as a mask such that the substrate has a pattern The inorganic film-forming composition includes a polyacid or a salt thereof, and an organic solvent. The step for forming a resist pattern may include the steps of: applying a resist composition on an upper face side of the inorganic film to provide a resist film; exposing the resist film; and developing the resist film exposed.

Pattern forming method

A pattern-forming method includes providing a resist underlayer film on a substrate using a resist underlayer film-forming composition. The resist underlayer film-forming composition includes a first polymer having a glass transition temperature of 0 to 180&#xb0; C. A silicon-based oxide film is provided on a surface of the resist underlayer film. A resist pattern is provided on a surface of the silicon-based oxide film using a resist composition. The silicon-based oxide film and the resist underlayer film are sequentially dry-etched using the resist pattern as a mask. The substrate is dry-etched using the dry-etched resist underlayer film as a mask.

Pattern-forming method and resist underlayer film-forming composition

A method for forming a pattern includes providing a resist underlayer film on a substrate using a first composition for forming a resist underlayer film. The first composition includes a polymer having a structural unit represented by a following formula (1). In the formula (1), Arand Areach independently represent a bivalent group represented by a following formula (2). A resist coating film is provided on the resist underlayer film using a resist composition. A resist pattern is formed using the resist coating film. A predetermined pattern is formed on the substrate by sequentially dry-etching the resist underlayer film and the substrate using the resist pattern as a mask. 

Method for forming pattern, and composition for forming resist underlayer film

A multilayer resist process pattern-forming method includes providing an inorganic film over a substrate. A protective film is provided on the inorganic film. A resist pattern is provided on the protective film. A pattern is provided on the substrate by etching that utilizes the resist pattern as a mask. A multilayer resist process inorganic film-forming composition includes a compound, an organic solvent, and a crosslinking accelerator. The compound includes a metal compound that includes a hydrolyzable group, a hydrolysate of a metal compound that includes a hydrolyzable group, a hydrolysis-condensation product of a metal compound that includes a hydrolyzable group, or a combination thereof. The compound includes at least one metal element belonging to Group 6, Group 12, or Group 13 of the Periodic Table of the Elements.

Multilayer resist process pattern-forming method and multilayer resist process inorganic film-forming composition

A pattern-forming method includes: (1) a resist underlayer film-forming step of providing a resist underlayer film on an upper face side of a substrate by coating a resist underlayer film-forming composition containing a resin having a phenolic hydroxyl group; (2) a resist pattern-forming step of forming a resist pattern on an upper face side of the resist underlayer film; (3) a pattern-forming step of dry etching at least the resist underlayer film and the substrate, with the aid of the resist pattern as a mask to form a pattern on the substrate; and (4) a resist underlayer film-removing step of removing the resist underlayer film on the substrate with a basic solution, in the order of (1) to (4).

Pattern-forming method, resist underlayer film, and composition for forming resist underlayer film

A method is provided to cut a thin-walled member without causing chattering vibration, without using a chattering vibration preventing retainer, that performs the following: (A) preparing a material having much stock for obtaining a thin-walled material, (B) while rotating the material about a center axis, cutting the inner round surface of the material within a predetermined range by feeding a cutting tool relative to material by the desired distance from one end side to the other end side of the material along the center axis, (C) while rotating the material about the center axis, cutting the outer round surface of the material within a predetermined range by feeding the cutting tool relative to the material by the desired distance from the one end side to the other end side of the material along the center axis, and (D) alternately repeating (B) and (C) to finish cutting the material.

Method of cutting thin-walled material

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Tokyo, Japan

Yoshio Takimoto