Tokyo Electron Limited

Kabushiki Kaisha Toshiba

Tokyo Electron Sagami Limited

Yoshio Kumagai

Naoki Shindo

Kinya Ueno

Yuuji Kamikawa

Katsuya Okumura

Takayuki Toshima

Shinji Miyazaki

Susumu Tanaka

Takahiko Moriya

Shori Mokuo

Yoshiyuki Honda

The wafers W are dipped and rinsed in pure water in the processing bath and then dichloromethane is fed into the processing bath thereby changing the state of the wafer W from being dipped in pure water to being dipped in dichloromethane. Thereafter, the wafers W is raised up to the drying chamber and dichloromethane remained on the surface of each wafer W is evaporated, and the hot N gas is discharged onto the wafers W. Thereby, no water marks are produced, and no resist is dissolved, and the substrate can be dried in safety.

Substrate rinsing and drying method

Disclosed is a method of washing substrates, comprising the steps of (a) introducing a washing solution into a processing vessel having a wafer boat movably mounted therein to fill the vessel with the washing solution, (b) allowing a plurality of wafers to be held collectively by chuck such that the wafers held by the chuck are arranged at substantially an equal pitch, (c) dipping the wafers together with the chuck in the washing solution within the processing vessel, (d) transferring the wafers from the chuck onto the wafer boat in an upper region of the processing vessel, (e) moving the wafers together with the wafer boat within the washing solution to allow the substrates to be positioned in a lower region of the processing vessel, (f) discharging the washing solution from the upper region of the processing vessel, (g) supplying a fresh washing solution into the lower region of the processing vessel so as to cause the washing solution within the processing vessel to overflow the processing vessel, (h) taking the washed wafers out of the processing vessel.

Substrate washing method, substrate washing-drying method, substrate

A spin dryer for centrifugally removing water droplets attached to a plurality of substrates comprises a rotor having a main shaft formed in a lower portion, substrate holding means for holding a plurality of substrates such that main surfaces of the substrates are perpendicular to the main shaft of the rotor, the holding means being positioned in symmetry with respect to the main shaft of the rotor and rotated together with the rotor, a treating vessel surrounding the rotor and the substrate holding means, an air inlet port formed in an upper portion of the treating vessel for introducing air into the treating vessel, and an exhaust port formed in a side portion of the treating vessel in a manner to extend upward from the bottom portion of the treating vessel to reach at least the height position of the rotor.

Spin dryer and substrate drying method

A substrate washing and drying apparatus comprising a processing section for holding wafers, to which process solution to wash and vapor for drying the wafers are introduced, a supply/discharge port for introducing solution to the process section, and discharging the solution from the process section, a solution supply mechanism for selecting one from a plurality of kinds of solution, a drying vapor generation section having a heater for generation vapor for drying, a discharging solution mechanism having an opening for rapidly discharging the solution from the processing section, resistivity detecting means for detecting a resistivity value of the process solution, and a controller for controlling the supply of solution to the process section based on the resistivity value detected by the resistivity detecting means.

Substrate washing and drying apparatus, substrate washing method, and

A cleaning device comprises a cleaning tub, holding means for holding a plurality of objects substantially vertically at regular intervals, cleaning solution supplying means for supplying a cleaning solution to the cleaning tub through the bottom thereof, and distributing means for uniformly distributing the cleaning solution to the objects.

Cleaning device

A cleaning device in the present invention comprises cleaning chambers each for cleaning subjects to be cleaned, transport units for transporting the subjects, transport chambers each having one of the transport units, first decompression means for decompressing each of the transport chambers to keep its internal atmospheric pressure lower than the external atmospheric pressure of the cleaning device by 0 through 0.02 mmH.sub.2 O, and second decompression means for decompressing each of the cleaning chambers to keep its internal atmospheric pressure lower than the internal atmospheric pressure of each of the transport chambers by 0 through 0.02 mmH.sub.2 O.

A film forming method comprises the steps of placing a plurality of objects to be processed and supplying an etching gas in a reaction container, removing a natural oxidization originated film on an object to be processed placed in the reaction container under a heating condition by plasma etching, exhausting the etching gas after stopping supply of the etching gas so as to stop making of the plasma, and supplying a film forming gas in the reaction container without rendering the reaction container open to air so as to form a film on the objects.

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Kofu, Japan

Yoshio Kumagai