Tokyo Electron Limited

Yoshinori Marumo

Kyungho Park

Teruyuki Hayashi

Hiroshi Sato

Takayuki Niuya

Koichiro Kimura

Yoshinori Kato

Michihiro Ono

Hideto Goto

Katsusuke Shimizu

It is an object of the present invention to provide an electroless plating pre-treatment solution and an electroless plating method capable of shortening the incubation time and achieving cost reduction. As the pre-treatment solutionto be supplied onto the wafer W before the electroless plating, an aqueous solution is supplied in which an activation accelerator to accelrate the oxidative decomposition reaction of a reducing agent and an oxide layer remover to remove an oxide layer formed on the wiring portionsare dissolved. The activation accelerator includes at least one selected from the group consisting of sulfonic acid having two or more characteristic groups, derivatives of the sulfonic, and salts of the sulfonic acid.

Electroless plating pre-treatment solution and electroles plating method

A plating apparatus includes a plating solution tank which stores a plating solution, a holder including an inner space to house a wafer and an opening for the wafer to be in contact with the plating solution, and a nitrogen supplying mechanism to supply nitrogen to the inner space of the holder.

Solution processing apparatus and solution processing method

Providing liquid treatment equipment capable of largely reducing a frequency of discarding a treatment solution as a whole and capable of implementing smooth and high quality liquid treatment with less manufacturing burden. Equipment comprises a treatment solution bath capable of accommodating a treatment solution for implementing liquid treatment to a substrate to treat, a treatment solution circulating system circulating the accommodated treatment solution between the outside of the treatment solution bath, and a product removal unit removing a reaction product due to the liquid treatment contained in the circulated treatment solution. By circulating the accommodated treatment solution between the outside of the treatment solution bath, reaction products contained in the circulated treatment solution are removed by means of the product removal unit. Thereby, a chemical change substance and a decomposition product remaining in a treatment solution can be removed, resulting in preventing a treatment solution from deteriorating.

Liquid treatment equipment, liquid treatment method, semiconductor device manufacturing method, and semiconductor device manufacturing equipment

A plating system comprises: a plating unit which plates a water; a plating solution storage tank which stores a plating solution; and a plating solution supply system which supplies the plating solution in the plating solution storage tank to the plating unit. A dissolved oxygen removing unit which removes dissolved oxygen from the plating solution flowing in the plating solution supply system is provided in the middle of the plating solution supply system.

Solution treatment system and solution treatment method

The object of the present invention is to provide a plating method capable of planarization process of high quality in comparison with the conventional plating method and also provide a plating device and a plating system adopting the plating method of the invention. In the plating method and device, an object to be processed and an electrode plate are dipped in a solution including objective metal ions and a forward current is supplied between the object and the electrode plate to educe a metal on the surface of the object. After forming a plating film on the object excessively, a backward current is supplied between the object and the electrode to uniformly remove at least part of superfluous plating film.

Method of forming a plated layer to a predetermined thickness

A film thickness measuring apparatus is provided with a housing which is made up of a base plate and outer cases, and which substantially shuts off the internal region thereof from the outside air, an introduction stage on which a cassette C is mounted, the cassette containing a plurality of substrates which have thin films formed thereon, a measurement stage which is arranged inside the housing and on which the substrate is placed for measuring the film thickness of the thin film, and a conveyance mechanism, arranged inside the housing, for moving the substrates between the inside of the cassette and the measurement stage. A film thickness measuring mechanism is arranged inside the housing. The film thickness measuring mechanism comprises a light emitting mechanism and a detector. The light emitting mechanism includes a laser light source for emitting a laser beam to the thin film on a wafer placed on the measurement stage. The detector detects light reflected from the thin film. On the basis of the information detected by the detector, the film thickness measuring mechanism measures the thickness of the thin film in a non-contact manner. A filter unit is arranged in the housing and located above the measurement stage. Through this filter unit, pure air free of gaseous organic matter is supplied and guided to the region above the measurement stage.

Growing community of inventors

Nirasaki, Japan

Yoshinori Marumo