Hitachi, Ltd.

Hitachi-high-technologies Corporation

Other

Canon Kabushiki Kaisha

Yoshimasa Fukushima

Masaki Mizuochi

Tsunehiko Tsubone

Hiroshi Tsuji

Mitsuru Inoue

Norio Nakazato

Yutaka Kakehi

Katsunori Onuki

Fumio Shibata

Toshinori Kobayashi

Masami Katsuyama

Minori Noguchi

Yasuhiro Yoshitake

Kenji Watanabe

Shuichi Nakagawa

Yasuhiro Someda

Noriaki Yamamoto

Norio Saitou

Hironori Ogawa

Masaki Kurihara

Toshihiko Horiuchi

Masahiro Koyama

Motohiro Takahashi

Sayaka Tanimoto

Masaru Matsushima

Norio Kanai

Nobuo Shibata

Tetsuya Niibori

Kousai Hiratsuka

There is proposed a column supporting structure that includes a viscoelastic sheet, a supporting plate which holds the viscoelastic sheet, and a fixation portion which connects the supporting plate to each lens barrel. The viscoelastic sheet is disposed to extend in a plane perpendicular to one lens barrel or the other lens barrel.

Charged particle beam apparatus and vibration damper for charged particle beam apparatus

Disclosed is a smaller and lighter stage device which can be applied to a device such as a length measurement SEM for inspecting and/or evaluating a semiconductor, and in which the effect of a magnetic field on an electron beam can be reduced. Linear motorsare disposed on four sides of a baseto be distanced from an electron beam projection position (the center of the stage device), respectively. The basehas dimensions substantially equivalent to minimum dimensions determined by the size of a top tableand a movable stroke. Linear motor statorsare configured to have a 'C-shaped' structure whose opening faces outside of the stage device, respectively. Further, a movable table is coupled to the top table via linear guidescomposed of a nonmagnetic material or roller mechanisms composed of a nonmagnetic material.

Stage device

To achieve high-resolution lithography, the temperature of a sample is controlled with heater wires during electron-beam lithography, the adverse effect of a magnetic field induced by the heater current is suppressed. Namely, heater wires are used to control the temperature of a sample so that the temperature will be maintained constant. In order to minimize the adverse effect of a magnetic field during the passage of currents through the heater wires, two heater wires are layered with the arrangement of the upper and lower sides, currents are fed to flow through the heater wires in mutually opposite directions, and the ratio of the current flowing through the upper heater wire to the one flowing through the lower heater wire is slightly changed from zero.

System and method for electron-beam lithography

An electron beam drawing apparatus has a sample chamber having a bottom plate, a side wall, and a top plate. Pillar members are disposed at four corners of the sample chamber and a frame is fixed to the pillar members. A plurality of supporting apparatuses for positioning a column mounted on the top plate to the frame are arranged around the column, thereby suppressing vibration of the column at the time of movement of a stage.

Electron beam drawing apparatus

An evacuation use sample chamber is constituted by a top table which is provided with a recessed portion disposed in a sample chamber main body and for mounting a sample and a groove portion surrounding the recessed portion; a stage which holds the top table and is displaceable in front and back, right and left and up and down directions together with the top table ; a sample chamber cover which covers above the sample chamber main body including the top table ; and an evacuation use pipe C which communicates with the groove portion and evacuates gas between the bottom face of the sample chamber cover and the top face of the top table including the sample . Thereby, an evacuation use sample chamber which performs a stable evacuation and keeps around a sample at a predetermined high vacuum and a circuit pattern forming apparatus which permits a highly accurate pattern drawing over the entire region of the sample are provided.

Evacuation use sample chamber and circuit pattern forming apparatus using the same

An electron beam lithography apparatus of the present invention prevents the electron beam trajectory from being affected by a leakage magnetic field from a permanent magnet which is used as a sample stage guide/driving mechanism. In this electron beam lithography apparatus, an air bearing guide is used as a sample stage guide mechanism, and the stage posture is held by attracting the stage floating on a surface plate to the surface plate side by the permanent magnet. To avoid the leakage magnetic field from the permanent magnet from affecting the electron beam irradiation position on the sample, the permanent magnet is magnetically shielded by a shield member. In addition, to reduce variations in magnetic field above the sample, which are generated when the shield member moves in a leakage magnetic field from the electron lens, another shield member is arranged under the electron lens.

Electron beam lithography apparatus

In a travelling worktable apparatus including a roller guide unit to guide a travelling table. Deformation of a sample table caused in association with precision of the guide unit such as deviation in precision of rail attachment and precision of rollers is prevented while keeping rigidity of the roller guide. This keeps a fixed distance between a bar mirror unit and a sample on the sample table. For this purpose, the Y table (top table) of the prior art is subdivided into a travelling table to hold the roller guide and a sample table to mount a sample thereon. These tables are fixed by a pin which can be more easily deformed than the tables and are linked with each other by an elastic body.

Travelling worktable apparatus

In a travelling worktable apparatus including a roller guide unit to guide a travelling table. Deformation of a sample table caused in association with precision of the guide unit such as deviation in precision of rail attachment and precision of rollers is prevented while keeping rigidity of the roller guide. This keeps a fixed distance between a bar mirror unit and a sample on the sample table. For this purpose, the Y table (top table) of the prior art is subdivided into a travelling table to hold the roller guide and a sample table to mount a sample thereon. These tables are fixed by a pin which can be more easily deformed than the tables aid are linked with each other by an elastic body.

A method and system for inspecting and/or analyzing semiconductor devices in which particles in a semiconductor wafer which is processed in a semiconductor device manufacturing line are detected. A particle is selected from among the detected particles and the selected particle is etched to expose a cross section of the selected particle. The selected particle whose cross section is exposed has the element thereof analyzed, and after analyzation, the semiconductor wafer is continued to be processed in the semiconductor device manufacturing line. For etching, pattern data having an edge which intersects the selected particle is created and the semiconductor wafer which is coated with a photosensitive material is exposed by a light pattern according to the pattern data so that an edge intersects the selected particle. Thereafter, the etching is carried out to expose the cross section of the selected particle and analyzation is effected.

Semiconductor device inspection and analysis method and its apparatus and a method for manufacturing a semiconductor device

A vacuum processing unit and apparatus comprises a buffer chamber that can be evacuated, a processing chamber that can be communicated with said buffer chamber a first sample carrier installed in said buffer chamber, a vacuum opening/closing device provided in the buffer chamber to correspond to the first sample carrier, a vacuum prechamber provided for the buffer chamber via the vacuum opening/closing device, a second sample carrier which carries the sample between the vacuum prechamber and the first sample carrier via the vacuum opening/closing device, and a third sample carrier which carries the sample between said first sample carrier and the processing chamber. The vacuum processing units can be connected in groups via vacuum opening/closing devices provided for the buffer chambers in locations corresponding to the end of the first sample carriers therein. The number of connected processing chambers can be freely changed to meet a change in the process or the manufacturing line.

Vacuum processing unit and apparatus

This invention relates to a method and apparatus for controlling temperature of a sample and is intended to prevent a sample from being deformed by the pressure of a heat transmission gas by mounting and fixing the sample being mounted and processed in a vacuum on and to the sample stand and supplying the heat transmission gas to the gap between the under surface of the sample thus fixed and the sample stand; effectively control the temperature of the sample being processed in a vacuum by limiting the size of the gap between the under surface of the sample and the sample stand; and make the heat transmission gas least affect the process by limiting the flow of the heat transmission gas in the vacuum process chamber.

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Hitachinaka, Japan

Yoshimasa Fukushima