Mitsubishi Denki Kabushiki Kaisha

Renesas Technology Corp.

Yoshiko Yoshida

Toshiaki Iwamatsu

Yasuo Yamaguchi

Yuuichi Hirano

Yasuhiro Kimura

Hideki Naruoka

A semiconductor substrate that prevents formation of particles from an edge part of the substrate. The substrate contains an on-substrate oxide film and an SOI layer stacked on the oxide film. A molten layer is formed on the edge part of the on-substrate oxide film and the SOI layer by mixing the SOI layer and the on-substrate oxide film to cover the edge part. An epitaxial layer may also be formed on the edge part of the on-substrate oxide film and the SOI layer to cover the edge part.

Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layers

An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate ( ) in the direction of radiuses of the SOI substrate ( ) to bring a buried oxide film ( ) in the edge part of the SOI substrate ( ) into a silicon-rich state. Thus an SOI substrate ( ) is provided, where the buried oxide film ( ) has substantially been eliminated in the edge part.

Semiconductor substrate processing method

An object is to provide a semiconductor substrate processing method and a semiconductor substrate that prevent formation of particles from the edge part of the substrate. Silicon ions are implanted into the edge part of an SOI substrate (,) in the direction of radiuses of the SOI substrate (,) to bring a buried oxide film (,) in the edge part of the SOI substrate (,) into a silicon-rich state. Thus an SOI substrate (,) is provided, where the buried oxide film (,) has substantially been eliminated in the edge part.

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Tokyo, Japan

Yoshiko Yoshida