Fujitsu Corporation

Yoshiko Okui

Masanori Kobayashi

Shuzo Fujimura

Tsutomu Ogawa

Haruhisa Mori

Yuka Hayami

Miki T Suzuki

Ken Yamazaki

Hiroki Ogawa

Semiconductor substrates are immersed in pure water having a lowered dissolved-oxygen concentration and heated to a temperature above 60.degree. C., in an atmosphere which keeps the dissolved oxygen concentration in pure water, in order to etch oxide films on surfaces of the semiconductor substrates for cleaning the surfaces of the semiconductor substrates. According to the present invention, contaminants and residual chemicals can be effectively removed without adding any chemical treating step. The cleaning can be effective without increasing the number of chemicals, and improved throughputs of the cleaning step can be obtained.

Semiconductor substrate cleaning method and semiconductor device

In a apparatus made of silica such as a heating furnace, a wafer basket, stick or the like used for semiconductor device fabrication, a first silica layer on the side faced to a semiconductor wafer contains a large amount of the OH group, and a second silica layer on the opposed side contains a small amount of the OH group. With this structure, it is possible to reduce the amount of impurities released through the first silica layer, and to suppress the deformation of the apparatus by the second silica layer. Also, by holding a third silica layer between the first and second silica layers, it is possible to further reduce the amount of impurities released from the first silica layer.

Apparatus made of silica for semiconductor device fabrication

Growing community of inventors

Kawasaki, Japan

Yoshiko Okui