Nec Electronics Corporation

Other

Renesas Electronics Corporation

Kanto Kagaku Kabushiki Kaisha

Kanto Chemical Co., Inc.

Yoshiko Kasama

Hidemitsu Aoki

Norio Ishikawa

Hiroaki Tomimori

Tatsuya Suzuki

Masayuki Takashima

Tomoo Nakayama

Atsushi Kikuchi

Yumiko Abe

Takuo Oowada

Keiji Hirano

Kenichi Nakabeppu

Tatsuya Koito

Kenichi Tokioka

Eiichi Fujikura

A method of manufacturing a semiconductor device includes a process of removing, by dry etching, an insulating layer which is formed on the top surface of a Ni-containing silicide layer to thereby at least partially expose the Ni-containing silicide layer; and a process of cleaning the exposed portion of the Ni-containing silicide layer using reduced water having a reductive function.

Method of manufacturing a semiconductor device

A cleaning solution for semiconductor substrates comprising a nonionic surface active agent of the formula (1) and/or the formula (2), a chelating agent and a chelating accelerator:CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(1)wherein l, m and n independently represent a positive number, and X represents a hydrogen atom or a hydrocarbon group;CH&#x2014;(CH)&#x2014;O&#x2014;(CHO)&#x2014;(CHO)&#x2014;X &#x2003;&#x2003;(2)wherein a, b, d, x and y independently represent a positive number, b and x are different, and X represents a hydrogen atom or a hydrocarbon group.

Cleaning solution for semiconductor substrate

There is provided a washing liquid composition for a semiconductor substrate having a contact angle between the surface thereof and water dropped thereon of at least 70 degrees, the washing liquid composition including an aliphatic polycarboxylic acid and a surfactant, and the washing liquid composition having a contact angle of at most 50 degrees when dropped on the semiconductor substrate. It is thereby possible to effectively remove particles and metals on the surface of a hydrophobic substrate without corroding it.

Washing liquid composition for semiconductor substrate

According to this invention, residues generated after selectively removing a low-dielectric-constant film such as SiOC can be effectively removed without damage on an insulating film or metal film. Specifically, residuesandgenerated after forming an interconnect trench in an SiOC filmare removed using a fluoride-free weak alkaline amine stripper. After the removing step, the wafer is rinsed with isopropyl alcohol and then dried without drying with pure water.

Preparation process for semiconductor device

The stripping agent is sprayed from the tip of the nozzleonto the wafer surface, while the first supply nozzleis actuated to scan from the central portion of the wafer to the outer portion thereof. This operation provides the situation, in which the interface of the residual dropletis pulled back from the center of the wafer to the outer portion of the wafer by the surface tension of the stripping agent supplied from the nozzle. Meanwhile, the second supply nozzlealso scans at a same scanning speed as the first supply nozzlescans. Vapor IPA is sprayed from the orifice of the second supply nozzle. This provides that vapor IPA is sprayed onto the wafer surface immediately after the stripping agent is sprayed thereon from the first supply nozzle, and the residual stripping agent on the wafer surface is efficiently replaced with IPA.

Method of manufacturing semiconductor device and apparatus for cleaning substrate

A photoresist residue remover composition is provided that includes one type or two or more types of fluoride compound and one type or two or more types chosen from the group consisting of glyoxylic acid, ascorbic acid, glucose, fructose, lactose, and mannose (but excluding one that includes ammonium fluoride, a polar organic solvent, water, and ascorbic acid). There is also provided use of the photoresist residue remover composition for removing a photoresist residue and a sidewall polymer remaining after dry etching and after ashing.

Photoresist residue remover composition

Growing community of inventors

Kanagawa, Japan

Yoshiko Kasama