Speedfam Co Ltd

Speedfam-ipec Co Ltd

Speedfam-pec Co Ltd

Yoshihisa Ogawa

Akitoshi Yoshida

Hiroaki Tanaka

Shunji Hakomori

Yusuke Inoue

The present invention is a polishing compound comprising a colloidal solution containing 1&tilde;15 wt. % of silicon oxide particles of 8&tilde;500 nanometer average diameter, wherein said colloidal solution is prepared as a buffer solution which has buffering action between pH 8.7&tilde;10.6 by the addition of one combination selected from groups composed by weak acid and strong base, strong acid and weak base or weak acid and weak base, and logarithms of reciprocal number of acid dissociation constant at 25&deg; C. of said weak acid and/or weak base is 8.0&tilde;12.0.

Polishing compound and a method for polishing

The present invention provides a polishing compound which does not make stain grow on the surface of work-piece comprising, the dispersion containing 1-30 wt. % of metal oxide particles having 8-500 nm average diameter, acid or alkali and salt, and whose pH is 7-12. Desirably said polishing compound is the compound in which water soluble organic solvent is contained. Further, present invention provides edge polishing method and surface polishing method by use of said polishing compound.

Polishing method for silicon wafers which uses a polishing compound which reduces stains

The present invention is a polishing compound comprising a colloidal solution of silicon oxide to which an alkaline component and an acid component are added in order to have a buffering action, wherein said alkali component is a quaternary ammonium whose carbon number per one molecular is smaller than 12, and said acid component is at least one selected from the group composed by carbonic acid, boric acid and silicic acid.

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Chiba, Japan

Yoshihisa Ogawa