Sharp Kabushiki Kaisha Corporation

Yoshihiro Yamamoto

Hitoshi Sannomiya

Katsuhiko Nomoto

Takashi Tomita

Sae Takagi

Junichiro Nakayama

Yutaka Takafuji

Kunio Kojima

Masaya Hijikigawa

Kengo Takahama

Yasuhiro Yoshida

Satoru Ariyoshi

Takashi Itoga

Yoshihiko Takeda

Tadashi Une

Kensuke Goto

Yoshihiko Minamiyama

An insulating substrate is bonded to a monocrystalline Si substrate that includes a monocrystalline Si thin film transistor and a hydrogen ion implanted portion. After depositing an amorphous Si thin film, the amorphous Si thin film is modified into a polycrystalline Si thin film by irradiation of the excimer laser. In laser irradiation, the irradiation of the laser beam on the monocrystalline Si thin film transistor is blocked either by inserting a mask in part of the optical path of the laser beam, or by irradiating the laser beam before unnecessary portions of the monocrystalline Si substrate is detached. In this way, the irradiation of the laser beam for forming the polycrystalline Si thin film will not damage the monocrystalline Si thin film transistor in a semiconductor device in which the monocrystalline Si thin film transistor, which has been transferred, and the polycrystalline Si thin film transistor, which has been formed on the insulating substrate, are formed on the insulating substrate.

Fabrication method of semiconductor device

A plasma addressing display device of the present invention includes: a plasma addressing substrate; a color filter substrate; and a display medium layer interposed between the plasma addressing substrate and the color filter substrate is provided. The plasma addressing substrate includes: a first substrate; a dielectric sheet provided near the display medium layer; a plurality of electrode lines provided at regular intervals on the first substrate; a plurality of partition walls provided respectively on the plurality of electrode lines; and a plurality of strip plasma discharge channels each enclosed by the first substrate, the dielectric sheet and the partition walls. The color filter substrate includes: a second substrate; a color filter layer provided on the second substrate; a plurality of strip electrodes provided on the color filter layer so as to extend in a direction orthogonal to the plurality of strip plasma discharge channels. A picture element is defined by a region where adjacent two of the plasma discharge channels overlap one of the plurality of strip electrodes.

Plasma addressing display device and method for producing the same

A method for producing a thin semiconductor film according to the present invention includes the steps of: placing a group-IV compound or a derivative thereof in a plasma state; decomposing the group-IV compound or the derivative thereof into active species; and depositing the active species on a substrate, wherein energy for generating plasma is intermittently supplied at a supply time interval which is equal to or less than a reciprocal of {(secondary reaction rate constant of a source gas reacting with active species other than long-life active species within the plasma).times.(number of source gas molecules)}.

Method for forming a thin semiconductor film and a plasma CVD apparatus

A backlight emits diffused light beams. An emission direction characteristic-forming plate allows light beams which have been incident thereon at generally right angles therewith to pass therethrough and intercepts light beams which have been incident thereon obliquely. An image display/input panel has light receiving elements each incorporated in a corresponding pixel having a liquid crystal cell. In an image input operation, pixels are sequentially turned on and off so as to scan an original document by parallel light emitted vertically from a turned-on pixel. Light reflected by the original document is received by the light receiving element incorporated in the turned-on pixel and converted into an electric signal. Light emitted from the turned-on pixel of the image display/input panel and reflected by the original document is received by only the turned-on pixel. In this manner, a high resolution can be obtained in the image input operation.

Image display/input apparatus

A thin-film solar cell with improved photoelectric conversion efficiency has an active region for photoelectric conversion including a doped layer formed in a laminated structure with a non-crystal layer and a layer of microcrystal mixtures.

Thin-film solar cells

Growing community of inventors

Nara, Japan

Yoshihiro Yamamoto