Fujitsu Corporation

Fujitsu Microelectronics Limited

Yoshihiro Sugita

Kiyoshi Irino

Yusuke Morisaki

Hitoshi Tanaka

Yasuyuki Tamura

Kanetake Takasaki

Yoshihiro Sugiyama

Takayuki Ohba

Yoshihisa Iba

Masaomi Yamaguchi

Hiroshi Minakata

Kazuto Ikeda

Chikako Yoshida

Yoshiaki Tanida

Tsunehisa Sakoda

Shiqin Xiao

Takayuki Aoyama

A permeation preventing film of a silicon nitride filmis inserted between a silicon substrateand a High-k gate insulation filmto thereby prevent the High-k gate insulation filmfrom being deprived of oxygen, while oxygen anneal is performed after a gate electrode layerhas been formed to thereby supplement oxygen. The silicon nitride filmwhich is the permeation preventing film, becomes a silicon oxide nitride filmwithout changing the film thickness, whereby characteristics deterioration of the High-k gate insulation filmdue to the oxygen loss can be prevented without lowering the performance of the transistor. The semiconductor device having the gate insulation film formed of even a high dielectric constant material can be free from the shift of the threshold voltage.

Semiconductor device and method for fabricating the same

A p-well () is formed on a surface of an Si substrate () and element isolation insulating films () are formed. Next, a thin SiOfilm () is formed on the whole surface, and an oxide film containing a rare earth metal (for example, lanthanum (La) or yttrium (Y)) and aluminum (Al) is formed thereon as an insulating film (). Furthermore, a polysilicon film () is formed on the insulating film (). After that, the SiOfilm () and the insulating film () are allowed to react with each other by performing a heat treatment, for example, at approximately 1000&#xb0; C. to form a silicate film containing the rare earth metal and Al. In a word, the SiOfilm () and the insulating film () are allowed to be a single silicate film.

Semiconductor device and method of manufacturing the same

An insulating film made of zirconia or hafnia is formed on the surface of a semiconductor substrate. A partial surface area of the insulating film is covered with a mask pattern. By using the mask pattern as a mask, ions are implanted into a region of the insulating film not covered with the mask pattern to give damages to the insulating film. By using the mask pattern as a mask, a portion of the insulating film is etched.

[object Object]

An ultra high-speed semiconductor device has a high-K dielectric gate insulator layer, wherein spread of impurities to a Si substrate from a gate electrode through the high-K dielectric gate insulator layer, and spread of oxygen and metallic elements from the high-K dielectric gate insulator layer to the Si substrate or the gate electrode are suppressed by arranging the high-K dielectric film sandwiched by nitrogen atomic layers on the Si substrate that is covered by an oxygen atomic layer.

Semiconductor device having a high-dielectric gate insulation film and fabrication process thereof

A semiconductor device in which the insulation characteristics of an insulating film of multilayer structure including a lower-layer insulating film and a high-dielectric-constant film formed on the lower-layer insulating film are ensured, and a method for fabricating such a semiconductor device. A silicon oxide film or a silicon oxynitride film is formed on a semiconductor substrate as a lower-layer insulating film and part of the lower-layer insulating film is removed. Then a high-dielectric-constant film the dielectric constant of which is higher than that of the lower-layer insulating film is formed on the exposed semiconductor substrate and the lower-layer insulating film. If the lower-layer insulating film is a silicon oxide film, then a metallic compound not including chlorine is used for forming this high-dielectric-constant film. If the lower-layer insulating film is a silicon oxynitride film, then a metallic chloride can be used for forming this high-dielectric-constant film.

Growing community of inventors

Kawasaki, Japan

Yoshihiro Sugita