Mitsubishi Denki Kabushiki Kaisha

Other

Mitsubishi Denki Kabsuhiki Kaisha

Yoshihiro Kashiba

Shigeki Maekawa

Megumi Takemoto

Kazunobu Miki

Yoshinori Deguchi

Kazuo Yoshida

Dai Nakajima

Takahiro Nagata

Masaru Okada

Shigeru Takada

Yuetsu Watanabe

Masahiko Tada

Yoshimi Kinoshita

Yasushi Tokumo

Hideaki Chuma

Mutsumi Kano

Kohei Adachi

Susumu Kono

Hiroki Toyoshima

Shunichi Abe

Toshiaki Kashihara

Yoshihiro Tomita

Tatsuhiko Ikeda

Noriharu Suematsu

Masahiro Tanaka

Michitaka Kimura

Masao Yamawaki

Naoto Ueda

Toshio Takeuchi

Yoshirou Nishinaka

Goro Izuta

Katsuyuki Fukutome

Masaaki Namatame

A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t&#x2266;r&#x2266;35t where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &#x3bc;m to 30 &#x3bc;m and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.

Semiconductor device test probe

A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 9t&#x2266;r&#x2266;35t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &#x3bc;m to 30 &#x3bc;m and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.

Two resilient sections are connected to a tip end which is to be brought into contact with an external connection terminal of a contact belonging to a test socket of an electronic device or semiconductor package. The resilient sections provided opposite to each other and are bent so as to extend horizontally with respect to the tip end. The force exerted downward on the tip end is equally distributed between the plurality of resilient sections. The resilient sections are eventually deflected downwardly without involvement of horizontal sliding action. The force which is exerted on the tip end in reaction to the downward deflection of the curved portions brings the tip end into pressing contact with the external connection terminal without involvement of horizontal sliding action of the tip end with respect to the external connection terminal.

Test socket, method of manufacturing the test socket, test method using the test socket, and member to be tested

Probesfor testing and outer connecting terminalsare electrically connected to a test socket for semiconductor devices. In use of a connecting sheet, fabricated by an elastically deformative insulating member and electrodes, flexibility is given, and good electrical contacts are obtainable. Further, because the connecting sheetis exchangeable, contacting capability is recovered by exchange when solder debris is adhered and deposited to increase contact resistances. Accordingly, even though there is scattering of the heights of the outer connecting terminals, good electrical contact with the probes is obtainable, and even though the solder debris of the outer connecting terminals is adhered and deposited as a result of repeated usage, tests can be continuously conducted, wherein the test socket for semiconductor devices has good maintenance capability.

Socket for testing a semiconductor device and a connecting sheet used for the same

A power semiconductor device that uses a lead frame for making connection to a semiconductor device and has a structure less subject to fatigue failure at the connection part of the lead frame. A mold resin of a casing () is used for integrally covering the lead frame (), semiconductor device (), and metal block () serving as a substrate mounting the semiconductor device (). The mold resin surrounding the lead frame () and semiconductor device () strengthens the joint therebetween, resulting in the power semiconductor device less subject to fatigue failure at the connection part of the lead frame ().

Power semiconductor device

A test probe for semiconductor devices, the test probe having a tip portion which is pressed against a test pad of a semiconductor device to establish electrical contact between the tip portion and the pad for testing the operation of the semiconductor device, wherein the probe is formed to have a tip shape with an angle of not less than 15 degrees formed at the surface of the pad between a tangential line with respect to a tip face of the probe and the pad surface when the probe is pressed against the pad, the tip shape of the probe having a spherical surface meeting the relationship of:&#x3b8;=cos(1&#x2212;)&#x2267;15&#xb0;where the radius of curvature of the spherical surface is R, the thickness of the pad is t, and the angle formed at the pad surface between the tangential line with respect to the probe tip face and the pad surface when the probe is pressed against the pad is &#x3b8;, the probe have a flat portion at an end of the tip portion. Accordingly, a contact surface can be established between the probe trip and the pad with a sufficient degree of electrical continuity, and when the the probe level is adjusted in the probing, a time required for positioning the probe prior to the start of measurement is cut down and variation in measurement are reduced.

Test probe for semiconductor devices, method of manufacturing of the same, and member for removing foreign matter

Multiple probe needles are arranged to be brought into contact with one electrode pad with a probe card, the multiple probe needles are connected in parallel with the same potential, and configured so that the amount of current flowing through the probe needles is at least halved, thereby decreasing generation of heat from Joule heat, and preventing melting of aluminum of which the electrode pads are composed. Consequently, a probe card can be provided wherein adhesion of molten material to the probe needles is suppressed, and wherein increased contact resistance due to oxidization of the material which has melted and adhered is prevented.

Probe card, and testing apparatus having the same

A vehicle AC generator having a rectifier unit with cooling plates for the positive-electrode and negative-electrode sides, each having principal planes opposing each other; and a diode package disposed between the cooling plates for the positive-electrode and negative-electrode sides. The diode package has a base for the positive-electrode side formed of a metallic plate and joined to a cathode face of the unidirectionally conducting element for the positive-electrode side; a base for the negative-electrode side formed of a metallic plate and joined to an anode face of the unidirectionally conducting element for the negative-electrode side; and an insulating resin provided so that the unidirectionally conducting elements for the positive-electrode and negative-electrode sides are embedded therein. The end face of the base for the positive-electrode side is joined to the principal plane of the cooling plate for the positive-electrode side while the end face of the base for the negative-electrode side is joined to the principal plane of the cooling plate for the negative-electrode side.

Vehicle AC generator with rectifier diode package disposed between cooling plates

A semiconductor device with a package fixed to a case, comprising: a package where a semiconductor element and a lead terminal connected to the semiconductor element are sealed up; and a case formed by a frame member and an external terminal disposed to the frame member, characterized in that the package is located inside the frame of the case and the lead terminal is connected with the external terminal.

Semiconductor device

The present invention provides a member for removing foreign matter adhering to the spherical tip portion of a test probe which is put into contact with the bonding pads of a semiconductor chip to test the action of the semiconductor chip. The member includes four essential layers of a base plate, a first elastic member on the base plate and flexibly deformable upon contact of the probe, specifically, a predetermined Young's modulus, a second elastic member on the first elastic member and having a tensile strength and a thickness responding to contact stress produced by the contact of the probe, and an abrasive layer on the second elastic member and made of hard particles and a binding material in a volume ratio providing a smooth sliding action of the probe and producing a high abrasive efficiency to any adhering foreign matter. The removing member can smoothly slide the probe to effectively remove the foreign matter adhering to the probe tip.

Member for removing foreign matter adhering to probe tip and method of manufacturing the probe tip, method of cleaning foreign matter adhering to probe tip, probe, and probing apparatus

A semiconductor device test probe having a tip portion for being urged against an electrode pad of an integrated semiconductor device to establish an electrical contact against the electrode pad for testing functions of the semiconductor device. The spherical tip portion has a radius of curvature r expressed by 8t&lE;r&lE;23t, where r is the radius of curvature of the spherical surface and t is the thickness of the electrode pad. The tip portion may have a first curved surface substantially positioned in the direction of slippage of the probe when the probe is urged against the electrode pad and slipped relative to the electrode pad and a second curved surface opposite to the first curved surface. The first curved surface has a radius of curvature of from 7 &mgr;m to 30 &mgr;m and larger than that of the second curved surface. The test probe may be manufactured by a method comprising the steps of roughing the tip portion of the curved surface by abrasing by means of electrolyte abrasion or abrasing particles to form a symmetrical spherical curved surface, and finishing the tip portion by sliding it on an abrasive member comprising an elastically deformable thick film fixed to a substrate and having abrasive particles therein or thereon directly or through a metallic film.

Semiconductor device test probe having improved tip portion and manufacturing method thereof

A probe card for testing a semiconductor integrated circuit is provided with a plurality of probes for inputting/outputting an electric signal for verifying the operation of a semiconductor integrated circuit to/from bonding pads of the semiconductor integrated circuit. The probes are formed by depositing a conductive film on a surface of a plurality of convex portions formed on a surface of an insulating substrate

Growing community of inventors

Tokyo, Japan

Yoshihiro Kashiba