Shin-etsu Chemical Co., Ltd.

Toppan Printing Co., Ltd.

Yoshihiro Ii

Yukio Inazuki

Hiroki Yoshikawa

Satoshi Okazaki

Takashi Haraguchi

Yuichi Fukushima

Tadashi Saga

In a phase shift mask blank comprising a phase shift multilayer film on a substrate, the phase shift multilayer film consists of at least one layer of light absorption function film and at least one layer of phase shift function film, and the light absorption function film has an extinction coefficient k which increases as the wavelength changes from 157 nm to 260 nm, and has a thickness of up to 15 nm. The phase shift mask blank has minimized wavelength dependency of transmittance and can be processed with a single dry etching gas.

Phase shift mask blank, phase shift mask, and pattern transfer method

Growing community of inventors

Tokyo, Japan

Yoshihiro Ii