Hitachi, Ltd.

Yoshihige Endou

Hideo Miura

Shinji Tanaka

Hiroyuki Ohta

Masatoshi Kanamaru

Hideyuki Aoki

Naoto Ban

Akihiko Ariga

Atsushi Hosogane

Ryuji Kouno

For an inspection tray, a silicon substrate including a beam or a diaphragm, a probe and wiring is used. To highly accurately position a chip to be inspected, a second substrate for alignment is disposed on the substrate. To position the probe having wiring disposed on the first substrate and the electrode pad of the chip to be inspected, a projection or a groove is formed in each of both substrates. Preferably, the projection or groove should be formed by silicon anisotorpic etching to have a (111) crystal surface. As another machining method, dry etching can be used for machining the positioning projection or groove. By using an inductively coupled plasma-reactive ion etching (ICP-RIE) device for the dry etching, a vertical column or groove can be easily machined.

Method for manufacturing substrate for inspecting semiconductor device

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Tsuchiura, Japan

Yoshihige Endou