Tokyo Electron Limited

Tokyo Electon Limited

Yoshihide Kihara

Toru Hisamatsu

Masanobu Honda

Maju Tomura

Masahiro Tabata

Takahiro Yokoyama

Takatoshi Orui

Sho Kumakura

Ryutaro Suda

Shinya Ishikawa

Tomoyuki Oishi

Takayuki Katsunuma

Hironari Sasagawa

Satoshi Ohuchida

Mingmei Wang

Michiko Nakaya

Yu-Hao Tsai

Du Zhang

Shuhei Ogawa

Masaya Kawamata

Kensuke Taniguchi

Yu Nagatomo

Yoshinari Hatazaki

Masahiko Yokoi

Koki Mukaiyama

Koichiro Inazawa

Shin Okamoto

Ryoichi Yoshida

Koki Tanaka

Ken Kobayashi

Keigo Toyoda

Kae Kumagai

Tomoki Suemasa

Toshio Haga

Tomohiko Niizeki

Wanjae Park

Hiromi Mochizuki

Yusuke Wako

Kae Takahashi

Motoi Takahashi

Noboru Saito

In an embodiment, in the method for processing a workpiece including an etching target layer containing silicon oxide, a mask provided on the etching target layer, and an opening provided in the mask and exposing the etching target layer, according to the embodiment, the etching target layer is etched by removing the etching target layer for each atomic layer through repetitive execution of a sequence of generating plasma of a first processing gas containing nitrogen, forming a mixed layer containing ions included in the plasma on an atomic layer on an exposed surface of the etching target layer, generating plasma of a second processing gas containing fluorine, and removing the mixed layer by radicals included in the plasma. The plasma of the second processing gas contains the radicals that remove the mixed layer containing silicon nitride.

Method for processing workpiece

An etching method includes: (a) providing a substrate having a silicon-containing film and a mask on the silicon-containing film in a chamber of a plasma processing apparatus, and (b) etching the silicon-containing film by generating plasma from a processing gas containing HF gas, and PClFgas (each of a and b is an integer of 1 or more) or PCHFgas (c is an integer of 0 or more, and each of d and e is an integer of 1 or more), in the chamber.

Etching method and plasma processing system

A method of processing a substrate includes patterning a mask over a dielectric layer and etching openings in the dielectric layer. The dielectric layer is disposed over the substrate. The etching includes flowing an etchant, a polar or H-containing gas, and a phosphorus-halide gas. The method may further include forming contacts by filling the openings with a conductive material.

Method for etching for semiconductor fabrication

A plasma processing method performed in a plasma processing apparatus having a chamber is provided. This method comprises: (a) providing a substrate having a film stack including a silicon oxide film and a silicon nitride film onto a substrate support in the chamber; and (b) forming a plasma from a processing gas containing HF gas and at least one of CFgas (where x and y are integers equal to or greater than 1) and phosphorus-containing gas to etch the film stack, wherein, in (b), the substrate support is controlled to a temperature of 0° C. or more and 70° C. or less, and a bias RF signal of 10 kW or more or a bias DC signal of 4 kV or more is supplied to the substrate support.

Plasma processing method and plasma processing system

A technique protects a mask in plasma etching of a silicon-containing film. An etching method includes providing a substrate in a chamber included in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask. The mask contains carbon. The etching method further includes etching the silicon-containing film with a chemical species in plasma generated from a process gas in the chamber. The process gas contains a halogen and phosphorus. The etching includes forming a carbon-phosphorus bond on a surface of the mask.

Etching method and plasma processing apparatus

A plasma processing method includes: (a) providing a substrate having an etching target film including a silicon oxide film and a silicon nitride film, and a mask film defining an opening over the etching target film, on a substrate support in a chamber of a plasma processing apparatus; (b) generating a first plasma from a first processing gas including HF gas, CFgas (x and y are integers of 1 or more) or CHFgas (s, t, and u are integers of 1 or more), and an oxygen-containing gas to etch the silicon nitride film; and (c) generating a second plasma from a second processing gas including HF gas, CFgas (v and w are integers of 1 or more), and an oxygen-containing gas to etch the silicon oxide film. In (b) and (c), a temperature of the substrate support is set to 0° C. or lower.

A substrate processing method comprising: providing a substrate having a silicon-containing dielectric film in the substrate support; and generating plasma from a processing gas including a hydrogen- and fluorine-containing gas to etch the silicon-containing dielectric film, wherein the etching step comprises supplying the processing gas into the chamber, supplying a first radio-frequency signal for generating the plasma to the substrate support or the upper electrode, and supplying a first electrical bias to the upper electrode.

Substrate processing method and substrate processing apparatus

A substrate processing apparatus includes a chamber; a substrate support disposed in the chamber; a gas supply that supplies a gas into the chamber; and a controller that controls an overall operation of the substrate processing apparatus. The controller executes a process including: (a) placing a substrate on the substrate support, the substrate including an etching layer and a patterned mask on the etching layer; (b) forming a film on the patterned mask; (c) forming a reaction layer on the film; and (d) removing the reaction layer by applying energy to the reaction layer. In the step (c) a temperature of the substrate is set according to a thickness of the reaction layer to be formed.

Substrate processing method and substrate processing system

A method of processing a substrate that includes: flowing dioxygen (O) and an adsorbate precursor into a plasma processing chamber that is configured to hold the substrate including an organic layer and a patterned etch mask; sustaining an oxygen-rich plasma while flowing the Oand the adsorbate precursor, oxygen species from the Oand the adsorbate precursor reacting under the oxygen-rich plasma to form an adsorbate; and exposing the substrate to the oxygen-rich plasma to form a recess in the organic layer, where the adsorbate forms a sidewall passivation layer in the recess.

In-situ adsorbate formation for plasma etch process

An etching method that is disclosed includes providing a substrate into a chamber. The substrate has a silicon-containing film including a silicon nitride film. The etching method includes generating plasma from a processing gas in the chamber to etch the silicon-containing film. The processing gas includes a fluorine-containing gas and a boron-containing gas. In the etching, a temperature of a substrate support supporting the substrate is set to a temperature of less than 0° C.

Etching method

An etching method in accordance with the present disclosure includes providing a substrate, which includes a silicon-containing film, in a chamber; and etching the silicon-containing film with a chemical species in plasma generated from a process gas supplied in the chamber. The process gas includes a phosphorus gas component and a fluorine gas component.

A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

Plasma processing method and plasma processing apparatus

A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

A substrate processing method includes: providing a substrate including a mask; forming a film on the mask; forming a reaction layer on a surface layer of the film; and removing the reaction layer by applying energy to the reaction layer.

According to an embodiment, a wafer (W) includes a layer (EL) to be etched, an organic film (OL), an antireflection film (AL), and a mask (MK), and a method (MT) according to an embodiment includes a step of performing an etching process on the antireflection film (AL) by using the mask (MK) with plasma generated in a processing container (), in the processing container () of a plasma processing apparatus () in which the wafer (W) is accommodated, and the step includes steps STto STof conformally forming a protective film (SX) on the surface of the mask (MK), and steps STto STof etching the antireflection film (AL) by removing the antireflection film (AL) for each atomic layer by using the mask (MK) on which the protective film (SX) is formed.

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Miyagi, Japan

Yoshihide Kihara