Mitsui Engineering and Shipbuilding Company Limited

Yoshiharu Chinone

Kazutoshi Murata

Shigehiro Nishino

The present invention has its object to make it possible to produce an &#x3b1;-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles, and so on, a &#x3b2;-SiC substrateand an SiC raw materialare placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube. The radiation tubeis heated by an induction heating coil, radiates radiation heat, and uniformly heats the cruciblesand so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the &#x3b2;-SiC substrate

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Tokyo, Japan

Yoshiharu Chinone