Tokyo Electron Limited

Yoshichika Tokuno

Takehiko Orii

Norihiro Ito

Hiroki Ohno

Yusuke Saito

Mitsunori Nakamori

Tadashi Iino

Hiroshi Nagayasu

Provided is a substrate processing method that prevents generation of watermarks on a substrate and can be performed at a low cost. The method controls the ambient humidity around the substrate depending on the kind of the chemical liquid, when the substrate is processed with the chemical liquid. The control of the humidity is performed at least in a drying step that dries the substrate W. In one embodiment, the ambient humidity around the substrate is controlled when a fluid containing IPA as a drying fluid is supplied to the substrate W after processing the substrate W with the chemical liquid.

Substrate processing method, storage medium and substrate processing apparatus

Water vapor is mixed to Ogas generated by an ozone generator of discharge type. The mixed fluid is cooled by a cooler, thereby impurities such as metals and nitrogen oxides contained in the Ogas dissolve into condensed water. Subsequently, a gas-liquid separator separates the Ogas from the condensed water. Water vapor is mixed with the Ogas again. The mixed fluid passes through a metal trap composed of a container containing plural silicon chips as a metal adsorbent, thereby to remove the remaining metals therefrom.

Ozone processing apparatus and ozone processing method

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Fukuoka-ken, Japan

Yoshichika Tokuno