Disco Corporation

Yoshiaki Yodo

Shigenori Harada

Yusuke Vincent Fujii

Hayato Kiuchi

Minoru Matsuzawa

Masamitsu Agari

Makiko Ohmae

Taro Arakawa

Emiko Kawamura

Toshiki Miyai

Jinyan Zhao

Naoko Yamamoto

Atsushi Kubo

Koji Watanabe

Kenji Furuta

Kunimitsu Takahashi

Nobuyasu Kitahara

Yohei Yamashita

Junichi Kuki

Chikara Aikawa

Seiji Fujiwara

A thermocompression bonding method for thermocompression bonding a sheet to a workpiece, where the method includes a stacking step of placing the sheet between a flat plate and the workpiece to form a stack in which the sheet is held between the workpiece and an entire surface of the flat plate and a thermocompression bonding step of thermocompression bonding the sheet to the workpiece while planarizing the sheet with the flat plate by heating the sheet and applying an external force to the stack, after performing the stacking step.

Thermocompression bonding method for workpiece

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

Wafer processing method including uniting wafer, ring frame, and polyolefin sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of picking up each device chip from the polyolefin sheet.

Wafer processing method including uniting wafer, ring frame and polyolefin sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyolefin sheet, pushing up each device chip through the polyolefin sheet, and picking up each device chip from the polyolefin sheet.

A workpiece processing method includes holding a workpiece unit on a holding table and forming a division start point. The workpiece unit has a workpiece having a front side and a back side, and an additional member formed on the back side of the workpiece. The additional member is different in material from the workpiece. The workpiece unit is held on the holding table with the additional member opposed to the holding table. The division start point is formed by applying a laser beam to the front side of the workpiece with the focal point of the laser beam set inside the workpiece. The laser beam forms a modified layer inside the workpiece and simultaneously forming a division start point inside the additional member due to the leakage of the laser beam from the focal point toward the back side of the workpiece.

Workpiece processing method

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

Wafer processing method including uniting wafer, ring frame and polyester sheet without using an adhesive layer

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing air to each device chip from the polyolefin sheet side to push up each device chip through the polyolefin sheet and picking up each device chip from the polyolefin sheet.

Wafer processing method including applying a polyolefin sheet to a wafer

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of blowing air to each device chip from the polyester sheet side to push up each device chip through the polyester sheet and picking up each device chip from the polyester sheet.

Wafer processing method

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

Wafer processing method including uniting a wafer, a ring frame and a polyester sheet without using an adhesive layer

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

A wafer processing method includes a polyolefin sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyolefin sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyolefin sheet as applying a pressure to the polyolefin sheet to thereby unite the wafer and the ring frame through the polyolefin sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of cooling the polyolefin sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyolefin sheet, then picking up each device chip from the polyolefin sheet.

Wafer processing method including uniting a wafer, ring frame and a polyolefin sheet without using an adhesive layer

A stacked wafer processing method for processing one wafer of a stacked wafer having at least two layers laminated, includes a sheet laying step of laying a thermocompression bonding sheet on an upper face of the one wafer, a thermocompression bonding step of thermocompression-bonding the thermocompression bonding sheet to an outer peripheral portion of the one wafer where a chamfered portion is formed, a modified layer forming step of irradiating the stacked wafer with a laser beam having a transmission wavelength to the thermocompression bonding sheet and the one wafer from the thermocompression bonding sheet side with a focal point of the laser beam positioned inside the outer peripheral portion of the one wafer, thereby continuously forming a modified layer inside the one wafer, and a chamfered portion removing step of expanding the thermocompression bonding sheet to break the chamfered portion, thereby removing the chamfered portion from the one wafer.

Stacked wafer processing method

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form modified layers in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of applying an ultrasonic wave to the polyester sheet in each of the plurality of separate regions corresponding to each device chip, pushing up each device chip through the polyester sheet, then picking up each device chip from the polyester sheet.

A wafer processing method includes a polyester sheet providing step of positioning a wafer in an inside opening of a ring frame and providing a polyester sheet on a back side or a front side of the wafer and on a back side of the ring frame, a uniting step of heating the polyester sheet as applying a pressure to the polyester sheet to thereby unite the wafer and the ring frame through the polyester sheet by thermocompression bonding, a dividing step of applying a laser beam to the wafer to form shield tunnels in the wafer, thereby dividing the wafer into individual device chips, and a pickup step of heating the polyester sheet, pushing up each device chip through the polyester sheet, and picking up each device chip from the polyester sheet.

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Tokyo, Japan

Yoshiaki Yodo