Kabushiki Kaisha Toshiba

Sony Corporation

Yoshiaki Ohwada

Yoshiaki Matsushita

Masaru Shimbo

Atsuko Kubota

Kiyoshi Fukuda

Sachio Shimada

In a method for predicting a density of micro crystal defects to be generated in a semiconductor element, an infrared absorption spectrum associated with a silicon wafer, which is used for the manufacture of the semiconductor element, is formed by a spectrum forming system. The spectrum has a first oxygen absorption peak at the wavenumber range of 1150 to 1050 cm.sup.-1 and a second oxygen absorption peak at 530 to 500 cm.sup.-1. First and second coefficients indicating oxygen concentrations at the first and second peaks are read by a reading unit. The density of the micro crystal defects are predicted by using a ratio of the first and second coefficients as a monitor.

Method for predicting density of micro crystal defects in semiconductor

A method of manufacturing a semiconductor substrate having a modified layer therein comprises the steps of mirror-polishing one surface of each of first and second semiconductor plates, forming a modified layer on at least one of the polished surfaces of the first and second semiconductor plates, and bonding the polished surfaces of the first and second semiconductor plates with each other in a clean atmosphere.

Method of manufacturing semiconductor substrate

A flyer-type winding machine includes a forming apparatus which is linearly reciprocated with respect to an axis of a bobbin, coil form or core on which a filament is to be wound while the filament is paid out from a flyer which rotates or orbits thereabout. The forming apparatus guides the filament to the bobbin, coil form or core. Moveable pins are synchronized with orbiting of the flyer to cooperate with the forming apparatus in intermittently catching and releasing the filament so as to control the positions at which portions of each turn of the filament are laid down on the bobbin, coil form or core.

Growing community of inventors

Yokohama, Japan

Yoshiaki Ohwada