Sumitomo Electric Industries, Limited

Yoshiaki Hagi

Tomohiro Kawase

Takashi Sakurada

Yasuaki Higuchi

Shigeto Kato

Tetsuya Inoue

Yusuke Yoshizumi

Ryusuke Nakai

Takuya Yanagisawa

Hideki Osada

Kazuaki Konoike

Hidetoshi Takayama

Shugo Minobe

Masanori Morishita

Muneyuki Nishioka

An indium phosphide crystal substrate has a diameter of 100-205 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of sulfur is from 2.0&#xd7;10to 8.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 10-500 cm, and when am atomic concentration of tin is from 1.0&#xd7;10to 4.0&#xd7;10cmor an atomic concentration of iron is from 5.0&#xd7;10to 1.0&#xd7;10cm, the indium phosphide crystal substrate has an average dislocation density of 500-5000 cm.

Indium phosphide crystal substrate

A gallium nitride crystal substrate has a diameter of 50-155 mm and a thickness of 300-800 &#x3bc;m and includes any of a flat portion and a notch portion in a part of an outer edge. The gallium nitride crystal substrate contains any of oxygen atoms, silicon atoms, and carriers at a concentration of 2&#xd7;10to 4&#xd7;10cm, and has an average dislocation density of 1000 to 5&#xd7;10cmin any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in a main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface.

Gallium nitride crystal substrate

A gallium arsenide crystal substrate has a diameter not smaller than 150 mm and not greater than 205 mm and a thickness not smaller than 300 &#x3bc;m and not greater than 800 &#x3bc;m and includes any of a flat portion and a notch portion. In any of a first flat region and a first notch region, when an atomic concentration of silicon is not lower than 3.0&#xd7;10cmand not higher than 3.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 0 cmand not higher than 15000 cm, and when an atomic concentration of carbon is not lower than 1.0&#xd7;10cmand not higher than 5.0&#xd7;10cm, the gallium arsenide crystal substrate has an average dislocation density not lower than 3000 cmand not higher than 20000 cm.

Gallium arsenide crystal substrate

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film () on the inner wall of a growth container () having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film () into contact with boron oxide melt containing silicon oxide to form a boron oxide film () containing silicon oxide on the inner wall of the growth container (); forming raw material melt () above seed crystal () placed in and on the bottom section of the growth container (); and solidifying the raw material melt () from the seed crystal () side to grow a semiconductor single crystal.

Growth container

Relates to a method of producing a semiconductor crystal having generation of a defect suppressed in the semiconductor single crystal. The production method includes the steps of: forming a boron oxide film on the inner wall of a growth container having a bottom section and a body section continuous to the bottom section; bringing the boron oxide film into contact with boron oxide melt containing silicon oxide to form a boron oxide film containing silicon oxide on the inner wall of the growth container; forming raw material melt above seed crystal placed in and on the bottom section of the growth container; and solidifying the raw material melt from the seed crystal side to grow a semiconductor single crystal.

Method of producing semiconductor single crystal

A crystal growth crucible made of boron nitride includes a cylindrical tip portion for accommodating a seed crystal, and a cylindrical straight-body portion for growing a crystal, which is formed above the tip portion and has a diameter larger than that of the tip portion. Thickness Tof the tip portion and thickness Tof the straight-body portion satisfy a condition of 0.1 mm&#x2266;T&#x3c;T&#x2266;5 mm, and inside diameter Dand length Lof the straight-body portion satisfy conditions of 100 mm&#x3c;Dand 2&#x3c;L/D&#x3c;5.

Crystal growth crucible

A crystal growth vessel for growing a crystal within a main container has a crystal growth starting portion in which the crystal starts to grow, whereas the crystal growth starting portion is formed from a material having a thermal conductivity higher than that of a material of the main container.

Crystal growth vessel and crystal growth method

A GaAs single crystal substrate and an epitaxial wafer using the same suppress the generation of slips during growth of the epitaxial layer, and improve the breakdown withstanding characteristic of devices fabricated on such substrates. The GaAs single crystal substrate has a mean dislocation density in plane of at most 2&times;10,cm,, a carbon concentration of 2.5 to 20.0&times;10,cm,, a boron concentration of 2.0 to 20.0&times;10,cm,, an impurity concentration other than carbon and boron of at most 1&times;10,cm,, an EL2 concentration of 5.0 to 10.0&times;10,cm,, resistivity of 1.0 to 5.0&times;10,&OHgr;&middot;cm and a mean residual strain measured by photoelastic analysis of at most 1.0&times;10,.

GaAs single crystal substrate and epitaxial wafer using the same

A compound semiconductor crystal has a reduced dislocation density. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and .eta. represents its activation factor:

Method of preparing compound semiconductor crystal

A compound semiconductor crystal has a reduced dislocation density reduced. The compound semiconductor crystal doped with an impurity satisfies the following relations, wherein c.c. represents its carrier concentration and .eta. represents its activation factor:

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Itami, Japan

Yoshiaki Hagi