Asm IP Holding B.v.

YoonKi Min

SeungJu Chun

Atsuki Fukazawa

Dai Ishikawa

Eiichiro Shiba

Shinya Ueda

Taishi Ebisudani

JongWan Choi

YongMin Yoo

SeYong Kim

HeeSung Kang

WanGyu Lim

YoungHoon Kim

SeokJae Oh

JaeOk Ko

HakJoo Lee

SeongIl Cho

JinGeun Yu

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing the sidewall portion of the film by wet etching which removes the sidewall portion of the film more predominantly than the top/bottom portion according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on top/bottom portions

A substrate processing method capable of achieving uniform etch selectivity in the entire thickness range of a thin film formed on a stepped structure includes: forming a thin film on a substrate by performing a plurality of cycles including forming at least one layer and applying plasma to the at least one layer under a first process condition; and applying plasma to the thin film under a second process condition different from the first process condition.

Substrate processing method

A substrate processing method with an improved etch selectivity includes: a first operation for forming a film on a stepped structure having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface, wherein a first atmosphere is set to reduce a mean free path of plasma ions and to cause the plasma ions to have no directionality; and a second operation for changing a bonding structure of a portion of the film, wherein a second atmosphere is set to cause the plasma ions to have directionality, wherein the first operation is repeated a plurality of times, the second operation is performed for a predetermined time period, the first operation and the second operation form a group cycle, and the group cycle is repeated by a plurality of times.

Method for manufacturing a semiconductor device

Provided is a substrate processing system for improving productivity of processes. In this regard, the substrate processing system includes: a first chamber providing a space where at least one substrate is accommodated; a second chamber configured to transfer at least one substrate to the first chamber; and a temperature control unit configured to change a temperature of a gas in the second chamber.

Substrate processing system

Method for forming silicon nitride film selectively on top surface

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si&#x2014;N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Growing community of inventors

Seoul, South Korea

YoonKi Min