Lsi Logic Corporation

Other

Yoon J Huh

Jau-Wen Chen

Erhong Li

Peter Bendix

An RC-triggered electrostatic discharge (ESD) power clamp circuit and method for providing ESD protection uses a control circuit with a latch to selectively activate a clamping transistor to discharge ESD on a first voltage rail to a second voltage rail.

RC-triggered ESD power clamp circuit and method for providing ESD protection

An implantation method to improve ESD robustness of thick-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies. Based on standard process flow in DGO, a thick gate-oxide ESD device is improved. Instead of using the standard I/O device, the ESD device uses the thin-oxide N-LDD implantation, and thus its ESD robustness is enhanced. This is performed by updating the logic Boolean operations of thick gate-oxide and thin gate-oxide N-LDD before fabricating the masks. In TGO, the intermediate-oxide ESD uses thin-oxide N-LDD implantation, and the thick-oxide ESD uses intermediate-oxide N-LDD implantation.

Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies

A semiconductor device which includes a P-well which is underneath NMOS fingers. The device includes an N-well ring which is configured so that the inner P-well underneath the NMOS fingers is separated from an outer P-well. The inner P-well and outer P-well are connected by a P-substrate resistance which is much higher than the resistance of the P-wells. A P+-diffusion ring surrounding the N-well ring is configured to connect to VSS, i.e., P-taps.

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San Jose, CA, United States of America

Yoon J Huh