Samsung Electronics Co., Ltd.

Yoon Dong Park

Jun Jin Kong

Kyoung Lae Cho

Seung-Hwan Song

Young Gu Jin

Jae Hong Kim

Ju Hwan Jung

Eric R Fossum

Jae-Hong Kim

Yibing Michelle Wang

Jong Han Kim

Heeseok Eun

Hyun Seok Lee

Dong Ki Min

Tae Yon Lee

Young Hwan Lee

Suk Pil Kim

Jung Kyu Jung

Ilia Ovsiannikov

Seok Lee

Young-Gu Jin

Tae-Chan Kim

Dong-Ki Min

Tae-Yon Lee

Tae-Seok Oh

Kwang-Hyun Lee

Jung Bin Yun

Dong Jae Shin

Je Il Ryu

Kyoung Ho Ha

Sang-Chul Sul

Woo Joo Kim

Sung Dong Suh

Dong Mo Im

Kyoung Won Na

Hyoung Soo Ko

Tae Eung Yoon

Chil Hee Chung

Hoon Sang Oh

Hyung Jin Bae

Seok Yong Hong

Dong Seok Suh

Seung Hyuk Chang

Won Ju Kim

Sang Hun Choi

An optical biosensor, and a method of manufacturing the same, includes a first layer, a second layer stacked on the first layer, a first grating coupler within the first layer and the second layer, and a second grating coupler within the first layer. The first grating coupler is configured to couple a light pattern provided to a front side of the optical biosensor. The second grating coupler is configured to output the light pattern coupled by the first grating coupler to a photoelectric conversion element on a rear side of the optical biosensor.

Optical biosensor and manufacturing method thereof

The image sensor includes a pixel array including a plurality of unit pixels each including a single transistor and a photodiode connected to a body of the single transistor, a row driver block configured to enable one of a plurality of rows in the pixel array to enter a readout mode, and a readout block configured to sense and amplify a pixel signal output from each of a plurality of unit pixels included in the row that has entered the readout mode.

Image sensor, method of operating the same, and image processing system including the same

A wafer test system includes an input device configured to transmit a test signal, a wafer including an optical port, an input port configured to receive the test signal, and an output port configured to output a result signal based on the test signal, a measuring device configured to measure the result signal, and an alignment device configured to align an optical fiber port of an optical probe with an alignment port based on the result signal and then align the optical fiber port with the optical port. The alignment port is the input port or the output port. The optical probe is configured to be the input device when the input port is the alignment port and the optical probe is configured to be the measuring device when the output port is the alignment port.

Test system and method for wafer including optical component

A method of operating an image sensor includes: thermoelectrically cooling a pixel using a thermoelectric element having a thermoelectric-junction integrated to the pixel; and performing a photoelectric conversion operation using the thermoelectric element. An image sensor includes a pixel and a readout circuit. The pixel includes a thermoelectric element having a thermoelectric-junction, and the readout circuit is configured to control the pixel such that the thermoelectric element performs a thermoelectric-cooling operation and a photoelectric conversion operation.

Image sensors for performing thermal reset, methods thereof, and devices including the same

A motion sensing method is implemented by an image sensor, the image sensor including a first pixel and a second pixel. The method includes outputting a first pixel signal of the first pixel during a first integration time of a frame period, outputting a second pixel signal of the second pixel during a second integration time of the frame period, and generating comparison signals indicative of a sensed moving object by comparing the first pixel signal and the second pixel signal.

Image sensor, operation method thereof, and system including the same

A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.

Binary CMOS image sensors, methods of operating same, and image processing systems including same

An operation method of an image sensor includes determining a distance between the image sensor and an object, and activating at least one of a color pixel, a depth pixel and a thermal pixel included in a pixel array of the image sensor based on a determined distance and a reference distance.

Image sensor, operation method thereof and apparatuses including the same

An image sensor includes a first photoelectric conversion element supplying charges to a first charge storage node, a first charge storage element adjusting an amount of charges supplied from a charge supply source to the first charge storage node in response to a feedback signal, and a feedback signal generating circuit generating the feedback signal based on an amount of charges in the first charge storage node.

Image sensor, operating method thereof, and device including the image sensor

A sensor, including a plurality of photo gate pairs on a semiconductor substrate, each of the photo gate pairs including a first photo gate and a second photo gate, a first shared floating diffusion region in the semiconductor substrate, and a plurality of first transmission transistors on the semiconductor substrate, wherein each of the plurality of first transmission transistors is adapted to transmit charges to the first shared floating diffusion region in response to a first transmission control signal, the charges being generated in the semiconductor substrate under the first photo gate of each of the plurality of photo gate pairs.

Sensor and method using the same

A unit pixel of a depth sensor including a light-intensity output circuit configured to output a pixel signal according to a control signal, the pixel signal corresponding to a first electric charge and a second electric charge, a first light-intensity extraction circuit configured to generate the first electric charge and transmit the first electric charge to the light-intensity output circuit, the first electric charge varying according to an amount of light reflected from a target object and a second light-intensity extraction circuit configured to generate the second electric charge and transmit the second electric charge to the light-intensity output circuit, the second electric charge varying according to the amount of reflected light. The light-intensity output circuit includes a first floating diffusion node. Accordingly, it is possible to minimize waste of a space, thereby manufacturing a small-sized pixel.

Pixel for depth sensor and image sensor including the pixel

Image sensors include a second photoelectric conversion device disposed in a lower portion of a substrate and a first photoelectric conversion device extending between the secondary photoelectric conversion device and a light receiving surface of the substrate. Electrical isolation between the first and second photoelectric conversion devices is provided by a photoelectron barrier, which may be an optically transparent electrically insulating material. MOS transistors may be utilized to transfer photoelectrons generated within the first and second photoelectric conversion devices to a floating diffusion region within the image sensor. These transistors may represent one example of means for transferring photoelectrons generated in the first and second photoelectric conversion devices to a floating diffusion region in the substrate, in response to first and second gating signals, respectively. The first and second gating signals may be active during non-overlapping time intervals.

Image sensors having multiple photoelectric conversion devices therein

Memory devices and/or methods that may estimate characteristics of multi-bit cell are provided. A memory device may include: a multi-bit cell array; a monitoring unit to extract a threshold voltage change over time value for reference threshold voltage states selected from a plurality of threshold voltage states corresponding to data stored in the multi-bit cell array; and an estimation unit to estimate a threshold voltage change over time values for the plurality of threshold voltage states based on the extracted threshold voltage change. Through this, it is possible to monitor a change over time of threshold voltages of a memory cell.

Memory device and method for estimating characteristics of multi-bit programming

A memory programming apparatuses and/or methods are provided. The memory programming apparatus may include a data storage unit, a first counting unit, an index storage unit and/or a programming unit. The data storage unit may be configured to store a data page. The first counting unit may be configured to generate index information by counting a number of cells included in at least one reference threshold voltage state based on the data page. The index storage unit may be configured to store, the generated index information. The programming unit may be configured to store the data page in the data storage unit and store the generated index information in the index storage unit. The first counting unit may send the generated index information to the programming unit. The memory programming apparatus can monitor distribution states of threshold voltages in memory cells.

Apparatus and method of memory programming

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Osan-si, South Korea

Yoon Dong Park