Basf Se Corporation

Basf Corporation

St. Lawrence Nanotechnology

Basf Taiwan Ltd.

Yongqing Lan

Julian Proelss

Michael Lauter

Max Siebert

Reza M Golzarian

Sheik Ansar Usman Ibrahim

Haci Osman Guevenc

Robert Reichardt

Yuzhuo Li

Zhenyu Bao

Mario Brands

Peter Przybylski

Te Yu Wei

Daniel Kwo-Hung Shen

Sophia Ebert

Alexander Kraus

Volodymyr Boyko

Joachim Dengler

Leonardus Leunissen

Vijay Immanuel Raman

Bastian Marten Noller

Ilshat Gubaydullin

Kevin Huang

Joachim Von Seyerl

Kenneth Rushing

Christian Daeschlein

Diana Franz

Kristine Hartnagel

Philipp Zacharias

Roland Lange

Karpagavalli Ramji

Alexandra Muench

Manuel Six

Gerald Daniel

Liang Jiang

Julian Prölß

Reza Golzarin

Nina Susanne Hilesheim

Julian PRÖLSS

The presently claimed subject matter is directed to a chemical mechanical polishing (CMP) composition comprising inorganic particles, at least one organic compound comprising an amino group and/or at least one acid group (Y), potassium persulfate, at least one corrosion inhibitor and an aqueous medium for polishing substrates of the semiconductor industry comprising cobalt and/or a cobalt alloy and TiN and/or TaN.

Chemical mechanical polishing composition

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a triazine derivative of the general formula (I) wherein R, R, R, R, Rand Rare independently from each other H, methyl, ethyl, propyl, butyl, pentyl, C-C-alkylcarboxylic acid, hydroxymethyl, vinyl or allyl (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10. 

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and / or cobalt alloy comprising substrates

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) an anionic surfactant of the general formula (I) R-S wherein R is C-C-alkyl, C-C-alkenyl, C-C-alkylacyl or C-C-alkenylacyl and S is a sulfonic acid derivative, an amino acid derivative or a phosphoric acid derivative or salts or mixtures thereof (C) at least one amino acid, (D) at least one oxidizer (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10.

Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy and (iii) Ti N and/or TaN, wherein the CMP composition (Q) comprises (E) Inorganic particles (F) at least one organic compound comprising an amino-group and an acid group (Y), wherein said compound comprises n amino groups and at least n+1 acidic protons, wherein n is a integer&#x2265;1. (G) at least one oxidizer in an amount of from 0.2 to 2.5 wt.-% based on the total weight of the respective CMP composition, (H) an aqueous medium wherein the CMP composition (Q) has a pH of more than 6 and less than 9.

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates

Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt and/or co-balt alloy comprising substrates Abstract Use of a chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) comprising (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) comprises (A) Inorganic particles (B) a substituted tetrazole derivative of the general formula (I), wherein Ris H, hydroxy, alkyl, aryl, alkylaryl, amino, carboxyl, alkylcarboxyl, thio or alkylthio. (C) at least one amino acid (D) at least one oxidizer, (E) an aqueous medium and wherein the CMP composition (Q) has a pH of from 7 to 10. 

A chemical mechanical polishing (CMP) composition (Q) comprising (A) Colloidal or fumed inorganic particles (A) or a mixture thereof in a total amount of from 0.0001 to 2.5 wt.-% based on the total weight of the respective CMP composition (B) at least one amino acid in a total amount of from 0.2 to 1 wt.-% based on the total weight of the respective CMP composition (C) at least one corrosion inhibitor in a total amount of from 0.001 to 0.02 wt.-% based on the total weight of the respective CMP composition (D) hydrogen peroxide as oxidizing agent in a total amount of from 0.0001 to 2 wt.-% based on the total amount of the respective CMP composition (E) aqueous medium wherein the CMP composition (Q) has a pH in the range of from 6 to 9.5.

Chemical mechanical polishing (CMP) composition

A chemical-mechanical polishing (CMP) composition comprising (A) inorganic particles, organic particles, or a composite or mixture thereof, (B) a polymeric polyamine or a salt thereof comprising at least one type of pendant group (Y) which comprises at least one moiety (Z), wherein (Z) is a carboxylate (&#x2014;COOR), sulfonate (&#x2014;SOR), sulfate (&#x2014;O&#x2014;SOR), phosphonate (&#x2014;P(&#x2550;O)(OR)(OR)), phosphate (&#x2014;O&#x2014;P(&#x2550;O)(OR)(OR)), carboxylic acid (&#x2014;COOH), sulfonic acid (&#x2014;SOH), sulfuric acid (&#x2014;O&#x2014;SO&#x2014;), phosphonic acid (&#x2014;P(&#x2550;O)(OH)), phosphoric acid (&#x2014;O&#x2014;P(&#x2550;O)(OH)) moiety, or their deprotonated forms, Ris alkyl, aryl, alkylaryl, or arylalkyl Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, Ris alkyl, aryl, alkylaryl, or arylalkyl, Ris H, alkyl, aryl, alkylaryl, or arylalkyl, and (C) an aqueous medium.

Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine

A process for removing a bulk material layer from a substrate and planarizing the exposed surface by CMP by (1) providing an CMP agent exhibiting at the end of the chemical mechanical polishing, without the addition of supplementary materials, the same SER as at its start and a lower MRR than at its start, &#x2014;an SER which is lower than the initial SER and an MRR which is the same or essentially the same as the initial MRR or a lower SER and a lower MRR than at its start; (2) contacting the surface of the bulk material layer with the CMP agent; (3) the CMP of the bulk material layer with the CMP agent; and (4) continuing the CMP until all material residuals are removed from the exposed surface; and a CMP agent and their use for manufacturing electrical and optical devices.

Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process

A chemical mechanical polishing (CMP) composition (Q) for chemical mechanical polishing of a substrate (S) containing (i) cobalt and/or (ii) a cobalt alloy, wherein the CMP composition (Q) contains: (A) Inorganic particles, (B) a substituted aromatic compound with at least one carboxylic acid function as corrosion inhibitor, (C) at least one amino acid, (D) at least one oxidizer, (E) an aqueous medium, wherein the CMP composition (Q) has a pH of from 7 to 10.

Disclosed herein is a chemical mechanical polishing (CMP) composition (Q) containing (A) inorganic particles, (B) a compound of general formula (I) below, and (C) an aqueous medium, in which the composition (Q) has a pH of from 2 to 6. 

Chemical mechanical polishing (CMP) composition for high effective polishing of substrates comprising germanium

Described are a chemical-mechanical polishing (CMP) composition comprising abrasive particles in the form of organic/inorganic composite particles as well as the use of said composite particles as abrasive particles in a CMP composition and processes for the manufacture of a semiconductor device comprising chemical mechanical polishing of a substrate in the presence said CMP composition.

Chemical-mechanical polishing composition comprising organic/inorganic composite particles

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Chemical-mechanical polishing compositions comprising one or more polymers selected from the group consisting of N-vinyl-homopolymers and N-vinyl copolymers

Described is a chemical-mechanical polishing (CMP) composition comprising the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more polyethylene imines (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

Chemical-mechanical polishing compositions comprising polyethylene imine

Described is a chemical-mechanical polishing (CMP) composition comprising the following components:

Chemical-mechanical polishing compositions comprising N,N,N',N&#x2032;-tetrakis-(2-hydroxypropyl)-ethylenediamine or methanesulfonic acid

Described is a use of a chemical-mechanical polishing (CMP) composition for polishing a substrate or layer containing one or more lll-V materials, wherein the chemical-mechanical polishing (CMP) composition comprises the following components: (A) surface modified silica particles having a negative zeta potential of &#x2212;15 mV or below at a pH in the range of from 2 to 6 (B) one or more constituents selected from the group consisting of (i) substituted and unsubstituted triazoles not having an aromatic ring annealed to the triazol ring, (ii) benzimidazole, (iii) chelating agents selected from the group consisting of amino acids with two or more carboxyl groups, aliphatic carboxylic acids, and the respective salts thereof, and (iv) homopolymers and copolymers of acrylic acid, and the respective salts thereof, (C) water (D) optionally one or more further constituents, wherein the pH of the composition is in the range of from 2 to 6.

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Ludwigshafen, Germany

Yongqing Lan