Applied Materials, Inc.

Yong-Won Lee

Li-Qun Xia

Steven Verhaverbeke

Christopher Dennis Bencher

Roman Gouk

Peter I Porshnev

Martin A Hilkene

Matthew D Scotney-Castle

Juan Carlos Rocha-Alvarez

Sanjeev Baluja

Thomas E Nowak

Derek R Witty

Mei-Yee Shek

Vladimir Zubkov

Scott A Hendrickson

Prahallad Iyengar

A method and apparatus for forming magnetic media substrates is provided. A patterned resist layer is formed on a substrate having a magnetically susceptible layer. A conformal protective layer is formed over the patterned resist layer to prevent degradation of the pattern during subsequent processing. The substrate is subjected to an energy treatment wherein energetic species penetrate portions of the patterned resist and conformal protective layer according to the pattern formed in the patterned resist, impacting the magnetically susceptible layer and modifying a magnetic property thereof. The patterned resist and conformal protective layers are then removed, leaving a magnetic substrate having a pattern of magnetic properties with a topography that is substantially unchanged.

Resist fortification for magnetic media patterning

A silicon dioxide layer is deposited onto a substrate using a process gas comprising BDEAS and an oxygen-containing gas such as ozone. The silicon dioxide layer can be part of an etch-resistant stack that includes a resist layer. In another version, the silicon dioxide layer is deposited into through holes to form an oxide liner for through-silicon vias.

Silicon dioxide layer deposited with BDEAS

Growing community of inventors

San Jose, CA, United States of America

Yong-Won Lee