Samsung Electronics Co., Ltd.

Semes Co., Ltd.

Dongwoo Fine-chem

Yong-Sun Ko

Kyung-Hyun Kim

Byoung-Moon Yoon

Kun-Tack Lee

Ji-Hoon Jeong

Chung-Ki Min

Hyo-San Lee

Yong-Jhin Cho

Kwang-Wook Lee

In-seak Hwang

Jae-Seung Hwang

Sung-Un Kwon

In-Seak Hwang

Tae-Hyun Kim

Jung-Min Oh

Young-Hoo Kim

Won-Jun Lee

Sang-Jine Park

Woo-Gwan Shim

Byung-Kwon Cho

In-Gi Kim

Yeon-Jin Gil

Il-Sang Lee

Ji-hong Kim

Hyo-Jin Lee

Tae-hyuk Ahn

Sang-tae Kim

Jong-chul Park

Tae-Won Kim

Woo-Young Kim

Boong Kim

Jeong-Yong Bae

Dae-Hyuk Chung

Hyun-Jung Lee

Jun Ho Seo

Se-Jin Park

Dong-Gyun Han

Ki-Jong Park

Chang-Gil Ryu

Chang-lyong Song

Kyong-ho Lee

Seong-min Kim

Won-Ho Jang

Sang-jine Park

Mi-Hyun Park

Na-Rim Kim

Cheol-Woo Park

Chang-ki Hong

Ki-Hyun Hwang

Hak Soo Kim

Seung-Ho Lee

Dong-Keun Kim

Sang-sup Jeong

Jae-Dong Lee

Jae-Jik Baek

Kun-tack Lee

Seok-Hoon Kim

Jong-Heui Song

Yong-Kug Bae

Jae-Kwang Choi

Young-Mi Lee

Kyoung-Yun Baek

Kyu-hwan Chang

In-joon Yeo

Young-Soo Lim

Min-Chul Chae

Dae-Keun Kang

Dong-keun Kim

Kwang-wook Lee

Jin-Suk Hong

Jae-Woo Kim

Yong-Myung Jun

Jae-Kyu Ha

Bo-Wo Choi

Kwang-Bok Kim

Kee-sang Kwon

Sang-won Bae

Chang-Hyun Nam

Yeol Jon

Kwang Wook Lee

Chang-Lyong Song

Bong-Ho Moon

Ju-Yun Cheol

Seung-pil Chong

Young-hoo Kim

A substrate processing apparatus includes a vessel providing a processing space for processing a substrate, a substrate support supporting the substrate loaded in the processing space, and a barrier between a side wall of the vessel and the substrate support and surrounding an edge of the substrate supported by the substrate support.

Substrate processing apparatus and apparatus for manufacturing integrated circuit device

A substrate processing apparatus includes: a spin chuck, on which a substrate is mounted, the spin chuck rotating the substrate; At least one of a chemical liquid nozzle configured to provide a chemical liquid to a surface of the substrate and a deionzed water nozzle configured to provide a deionized water to a surface of the substrate; and a laser device configured to emit a pulse waver laser beam having a period of 10seconds or less for etching an edge of the substrate.

Substrate processing apparatus

A substrate processing apparatus includes a chamber providing a space in which a substrate is processed, a first substrate support within the chamber and configured to support the substrate when the substrate is loaded into chamber, a second substrate support within the chamber and configured to support the substrate in a height greater than the height in which the first substrate supports the substrate, a first supply port through which a supercritical fluid is supplied to a first space under the substrate of a chamber space, a second supply port through which the supercritical fluid is supplied to a second space above the substrate of the chamber space, and an exhaust port through which the supercritical fluid is exhausted from the chamber.

Substrate processing apparatus and substrate processing system including the same

Disclosed are a supercritical process chamber and an apparatus having the same. The process chamber includes a body frame having a protrusion protruding in an upward vertical direction from a first surface of the body frame and a recess defined by the protrusion and the first surface of the body frame; a cover frame; a buffer chamber arranged between the body frame and the cover frame; and a connector. The buffer chamber includes an inner vessel detachably coupled to the body frame providing a chamber space in the recess and an inner cover detachably coupled to the cover frame. The inner cover is in contact with a first surface of the inner vessel enclosing the chamber space from surroundings. The connector couples the body frame and the cover frame having the buffer chamber arranged therebetween such that the enclosed chamber space is transformed into a process space in which the supercritical process is performed.

Process chamber for a supercritical process and apparatus for treating substrates having the same

A composition for removing photoresist, including an alkyl ammonium fluoride salt in an amount ranging from about 0.5 weight percent to about 10 weight percent, based on a total weight of the composition; an organic sulfonic acid in an amount ranging from about 1 weight percent to about 20 weight percent, based on the total weight of the composition; and a lactone-based solvent in an amount ranging from about 70 weight percent to about 98.5 weight percent, based on the total weight of the composition.

Compositions for removing photoresist

A spot heater and a device for cleaning a wafer using the same are provided. The wafer cleaning device includes a heater chuck on which a wafer is mounted, the heater chuck configured to heat a bottom surface of the wafer; a chemical liquid nozzle configured to spray a chemical liquid on a top surface of the wafer for etching; and a spot heater configured to heat a spot of the top surface of the wafer.

Spot heater and device for cleaning wafer using the same

An integrated circuit device includes an insulating film on a substrate, a lower wiring layer penetrating at least a portion of the insulating film, the lower wiring layer including a first metal, a lower conductive barrier film surrounding a bottom surface and a sidewall of the lower wiring layer, the lower conductive barrier film including a second metal different from the first metal, a first metal silicide capping layer covering a top surface of the lower wiring layer, the first metal silicide capping layer including the first metal, and a second metal silicide capping layer contacting the first metal silicide capping layer and disposed on the lower conductive barrier film, the second metal silicide capping layer including the second metal.

Integrated circuit device

Methods of manufacturing semiconductor devices using a composition for removing photoresist and methods of removing photoresist from a semiconductor substrate

A sealing member includes a body having a ring shape, a lower contacting portion protruding from a lower end of the body and having at least one recess, the recess provided in a lower surface of the lower contacting portion and extending in a radial direction of the body, and an outer contacting portion protruding outwards from the body along an outer side portion of the body.

Sealing member and substrate processing apparatus including the same

A cleaning solution composition includes an organic solvent in which a metal fluoride does not dissolve, at least one fluoride compound that generates bifluoride (HF), and deionized water, wherein the deionized water may be included in a concentration of 1.5 wt % or lower based on the total weight of the cleaning solution composition.

Cleaning solution composition and method of cleaning semiconductor device using the same

In an embodiment, a chemical mechanical polishing method for a substrate having a first layer and a stepped portion. A surface of the first layer is positioned above an upper face of the stepped portion. A polishing process for selectively removing the stepped portion is performed on the first layer by using a first slurry composition that has a self-stopping characteristic so that the first layer is changed into a second layer having a substantially flat surface. A second polishing process is performed using a second slurry composition that does not have the self-stopping characteristic, until the upper face of the stepped portion is exposed.

Chemical mechanical polishing method

In a 6Fcell structure of a memory device and a method of fabricating the same, the plurality of active regions may have a first area at both end portions and a second area at a central portion. A portion of a bit-line contact pad may be positioned on the second area and the other portion may be positioned on a third area of the substrate that may not overlap with the plurality of active regions. The bit line may be connected with the bit-line contact pad at the third area. The cell structure may be more easily formed despite a 6F-structured unit cell. The plurality of active regions may have an elliptical shape including major and minor axes. The plurality of active regions may be positioned in a major axis direction to thereby form an active row, and may be positioned in a minor axis direction in such a structure that a center of the plurality of active regions is shifted from that of an adjacent active region in a neighboring active row.

Cell structure for a semiconductor memory device and method of fabricating the same

Growing community of inventors

Suwon-si, South Korea

Yong-Sun Ko