Numerical Technologies, Inc.

Luminescent Technologies, Inc.

Yong Liu

Hua-Yu Liu

Linyong Pang

Danping Peng

Daniel S Abrams

Paul Rissman

John F McCarty

Kelly Gordon Russell

Embodiments of a method for determining a mask pattern to be used on a photo-mask in a lithography process are described. This method may be performed by a computer system. During operation, this computer system receives at least a portion of a first mask pattern including first regions that violate pre-determined rules associated with the photo-mask. Next, the computer system determines a second mask pattern based on at least the portion of the first mask pattern, where the second mask pattern includes second regions that are estimated to comply with the pre-determined rules. Note that the second regions correspond to the first regions, and the second mask pattern is determined using a different technique than that used to determine the first mask pattern.

Technique for correcting hotspots in mask patterns and write patterns

A method for determining a mask pattern to be used on a photo-mask in a photolithographic process is described. During the method, a target pattern that includes at least one continuous feature is provided. Then a mask pattern that includes a plurality of distinct types of regions corresponding to the distinct types of regions of the photo-mask is determined. Note that the mask pattern includes at least two separate features corresponding to at least the one continuous feature. Furthermore, at least the two separate features are separated by a spacing having a length and the spacing overlaps at least a portion of at least the one continuous feature.

Mask-patterns including intentional breaks

An accurate, cost-effective system and method for correcting 3D effects on an alternating phase-shifting mask (PSM) is provided. To facilitate this correction, a library can be built to include a first group of 180 degree phase-shifting regions, wherein these regions have a common first size. Based on this first size, 3D simulation is performed. A transmission and a phase are altered in a 2D simulation based on this first size until a shape dependent transmission and a shape dependent phase allow the 2D simulation to substantially match the 3D simulation. Finally, a modified first size is chosen using the shape dependent transmission and the shape dependent phase such that a 2D simulation based on the modified first size substantially matches the 3D simulation based on the first size. The library associates the first size with the modified first size, the shape dependent transmission, and the shape dependent phase.

System and method for correcting 3D effects in an alternating phase-shifting mask

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Fremont, CA, United States of America

Yong Liu