Maxim Integrated Products, Inc.

Yong L Xu

Arkadii V Samoilov

Viren V Khandekar

Yi-Sheng Anthony Sun

Tiao Zhou

Duane Wilcoxen

Xiansong Chen

Kumar Nagarajan

Reynante Tamunan Alvarado

Karthik Thambidurai

Satbir Madra

Kaysar M Rahim

Joseph W Serpiello

Md Kaysar Rahim

S Kaysar Rahim

A wafer level package includes a wafer, a lead disposed of the wafer for connecting the wafer to an electrical circuit, and a core disposed of the lead. In some embodiments, the lead disposed of the wafer is a copper pillar, and the core is plated onto the copper pillar. In some embodiments, the core is polymer screen-plated onto the lead. In some embodiments, the core extends between at least approximately thirty-five micrometers (35 &#x3bc;m) and fifty micrometers (50 &#x3bc;m) from the lead. In some embodiments, the core covers between at least approximately one-third (&#x2153;) and one-half (&#xbd;) of the surface area of the lead. In some embodiments, the core comprises a stud-shape extending from the lead. In some embodiments, the core extends perpendicularly across the lead. In some embodiments, the core extends longitudinally along the lead. Further, a portion of the core can extend perpendicularly from a longitudinal core.

Solder fatigue arrest for wafer level package

Wafer-level package (semiconductor) devices are described that have a reinforcement layer formed on an adhesion layer and/or a semiconductor substrate and covering at least a portion of at least one solder bump. Additionally, the reinforcement layer may cover at least a portion of a semiconductor device (e.g., a die) mounted on the semiconductor substrate. In an implementation, the wafer-level package (semiconductor) device may include an integrated circuit chip with an attached die, where the integrated circuit chip has at least one solder bump formed thereon with a reinforcement layer formed on a surface of the integrated circuit chip, where the reinforcement layer embeds the die and covers a portion of the at least one solder bump.

Wafer-level package device with solder bump reinforcement

A semiconductor package device, electronic device, and fabrication methods are described that include at least one sacrificial contact pad as a portion of the semiconductor package device for preventing and reducing stress on the semiconductor package device and increasing board level reliability. In implementations, the semiconductor package device includes a lead frame substrate including at least one lead frame contact pad and at least one sacrificial contact pad, an integrated circuit device electrically coupled to the lead frame substrate, and an encapsulation layer that encapsulates the lead frame substrate and the integrated circuit device. In implementations, one process for fabricating the semiconductor package device includes placing an integrated circuit device on a lead frame substrate, where the lead frame substrate includes at least one lead frame contact pad and at least one sacrificial contact pad, and encapsulating the integrated circuit device and the lead frame substrate with an encapsulation layer.

Sacrificial pad on semiconductor package device and method

Semiconductor devices are described that have an extended under ball metallization configured to mitigate dielectric layer cracking due to stress, particularly stress caused by CTE mismatch during thermal cycling tests, dynamic deformation during drop tests, or cyclic bending tests, and so on. In an implementation, the semiconductor package devices include an integrated circuit chip having a solder ball and under ball metallization, formed on the integrated circuit chip, which is configured to receive the solder ball so that the solder ball and the under ball metallization have a contact area there between, wherein the area of the under ball metallization is area greater than the contact area.

Integrated circuit device having extended under ball metallization

Wafer-level package (semiconductor) devices are described that have a pillar structure that extends at least partially into a solder bump to mitigate thermal stresses to the solder bump. In implementations, the wafer-level package device may comprise an integrated circuit chip having a surface and a solder bump disposed over the surface. The wafer-level package device may also include a pillar structure disposed over the surface that extends at least partially into the solder bump.

Wafer-level package device having solder bump assemblies that include an inner pillar structure

Semiconductor package devices, such as wafer-level package semiconductor devices, are described that have pillars for providing electrical interconnectivity. In an implementation, the wafer-level package devices include an integrated circuit chip having at least one pillar formed over the integrated circuit chip. The pillar is configured to provide electrical interconnectivity with the integrated circuit chip. The wafer-level package device also includes an encapsulation structure configured to support the pillar.

Techniques for wafer-level processing of QFN packages

An enhanced redistribution layer is provided that geometrically expands redistribution layer (RDL) pads associated with a ball grid array of a wafer level package (WLP) to provide tensile stress relief during temperature cycle and/or drop testing of the WLP.

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Plano, TX, United States of America

Yong L Xu