Asm IP Holding B.v.

Skhynix Inc.

Other

Samsung Sdi Co., Inc.

Yong Gyu Han

Dae Youn Kim

Young Hoon Kim

Jeong Ho Lee

Hyun Soo Jang

Jun Hyuk Lee

Joon-bae Lee

Tae Hee Yoo

Wan Gyu Lim

Jin Geun Yu

Chang-Won Park

Young-rag Do

Kateryna Michailovskaya V

Petro Shepeliavyi E

Ivan Indutnyy Z

Ki Chul Um

A substrate processing apparatus having an improved film processing uniformity is provided. The substrate processing apparatus includes a partition configured to provide a gas supply channel and a gas supply unit connected to the gas supply channel. A gas flow channel communicating with the gas supply channel is formed in the gas supply unit. A first through-hole is formed to penetrate through at least a part of the partition. A second through-hole is formed to penetrate through at least a part of the gas supply unit. The first through-hole communicates with the gas flow channel via the second through-hole. The second through-hole is arranged between a center and an edge of the gas flow channel, and is arranged spaced apart from the edge.

Gas supply unit and substrate processing apparatus including the gas supply unit

A substrate processing apparatus includes a partition comprising at least one through-hole, a conduit arranged in the partition through the through-hole, a gas supply unit connected to the conduit, and a low dielectric material provided between a side wall of the through-hole and the conduit.

Substrate processing apparatus

A plasma supply unit includes a first conductive portion, a second conductive portion having at least a part extending to overlap the first conductive portion, and a ground shield located between the first conductive portion and the second conductive portion, and a substrate processing apparatus including the plasma supply unit.

A substrate processing apparatus having improved uniformity and speed of reaction is provided. A substrate processing apparatus includes a body portion comprising a discharge path, a gas supply unit connected to the body portion, a first partition extending from the body portion, a second partition extending from the body portion and arranged between the gas supply unit and the first partition, and a substrate support unit configured to have surface-sealing with the first partition, wherein a first region between the first partition and the second partition and a second region between the gas supply unit and the second partition are connected to the discharge path.

A memory device and an operating method of the memory device is disclosed. The memory device includes a memory cell array including a plurality of memory blocks. The memory device further includes a peripheral circuit for performing an erase voltage application operation, a first erase verify operation, and a second erase verify operation on a selected memory block among the plurality of memory blocks. The memory device also includes a control logic for setting a start erase voltage of an erase operation, based on a result of the first erase verify operation, and controlling the peripheral circuit to perform the second erase verify operation when it is determined that the first erase verify operation on the selected memory block has been passed.

Memory device and an operating method of a memory device

Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.

Method of depositing thin film and method of manufacturing semiconductor device

A photolithography method includes applying to a substrate a coating of a film forming composition containing a bonding resin and a film forming material and drying to form a film; selectively coating the film with a photosensitive composition including a photosensitizer to form a film pattern; exposing the film with the film pattern; and developing the film. Therefore, a film in a pattern and having excellent characteristics can be manufactured easily and efficiently. The photolithography method can be applied to any product which requires the formation of a film in a pattern.

Smart photolithography

A black matrix, a preparation method thereof and a display device employing the black matrix. The black matrix which is a black coating layer surrounding pixels of the display device, includes SiO which is a dielectric material and at least one metal selected from the group consisting of iron (Fe), cobalt (Co), vanadium (V) and titanium (Ti). The black matrix has excellent thermal and chemical stability and is environmentally desirous by using a mixture of a nontoxic metal and a dielectric material. Also, the black matrix exhibits excellent adhesion to a substrate without an annealing process, is excellent in mechanical characteristic due to the absence of internal stress and is capable of being micro-patterned to have a particle size of 1 &mgr;m or less. When applied to the substrate of the display device, the black matrix exhibits excellent external light absorbing effect. Therefore, a display device having improved luminance and contrast characteristics can be attained.

Growing community of inventors

Seoul, South Korea

Yong Gyu Han