United Microelectronics Corp.

Yong-Fa Huang

Chun-Chi Yu

Cheng-Han Wu

Benjamin Szu-Min Lin

Yuan-Chi Pai

Hung-Yi Wu

Bo-Jou Lu

Huan-Ting Tseng

A method for forming photoresist patterns includes providing a substrate, forming a bi-layered photoresist on the substrate, and performing a photolithography process to pattern the bi-layered photoresist. The bi-layered photoresist includes a first photoresist layer and a second photoresist layer positioned between the first photoresist layer and the substrate. The first photoresist layer has a first refraction index and the second photoresist layer has a second refraction index, and the second refraction index is larger than the first refraction index.

Method for forming photoresist patterns

To avoid the yield of wafers that undergo immersion lithography influencing by delay of post exposure baking (PEB), an operation system adjusts a speed of inputting the wafers to undergo immersion lithography according to a status of wafers that have finished exposure and are waiting for baking. Therefore, the wafers that have finished exposure are transmitted to be baked efficiently and on time.

Method and related operation system for immersion lithography

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Tainan, Taiwan

Yong-Fa Huang