Ebara Corporation

Yoichi Shiokawa

Keita Yagi

Katsuhide Watanabe

Toru Maruyama

Masaki Kinoshita

Nobuyuki Takahashi

Yoichi Kobayashi

Itsuki Kobata

Toshifumi Kimba

Hirokuni Hiyama

Yutaka Wada

Yoshihiro Mochizuki

Akira Fukuda

Toshimitsu Sasaki

Akira Nakamura

Koji Maeda

Yuki Watanabe

Hisanori Matsuo

Yu Ishii

Yasuyuki Motoshima

Tadakazu Sone

Yoshikazu Kato

Katsutoshi Ono

Hisajiro Nakano

Hiroshi Shimomoto

Masayoshi Imai

Suguru Sakugawa

Tomohiko Takeuchi

Zhongxin Wen

Nachiketa Chauhan

Jyoji Heianna

A film-thickness measuring method capable of substantially extending a wavelength range of a spectrum of reflected light from a workpiece, and accurately measuring a film thickness is disclosed. The film-thickness measuring method includes: pressing a workpiece against a polishing pad, while rotating a polishing table that supports the polishing pad, to polish the workpiece; during the polishing of the workpiece, directing light to the workpiece from a liquid-seal sensor and a transparent-window sensor disposed in the polishing table and receiving reflected light from the workpiece by the liquid-seal sensor and the transparent-window sensor; and determining a film thickness of the workpiece based on a spectrum of the reflected light from the workpiece.

Measuring film-thickness of a workpiece in a semiconductor processing apparatus using a composite spectrum

A polishing apparatus capable of obtaining a desired film thickness profile is disclosed. The polishing apparatus includes: a polishing unit; a film thickness measuring device for measuring a film thickness profile of a substrate; and a controller for controlling at least operations of the polishing unit and the film thickness measuring device. The controller stores in advance a response model which is created by taking into consideration variation in an amount of polishing between monitored areas of the substrate due to variations in a pressure of a pressurized fluid supplied to each of pressure chambers. Further, the controller obtains a film thickness profile of the substrate before polishing by use of a film thickness measuring device, and causes the substrate to be polished with an optimized polishing recipe created based on the response model and a target polishing amount, which is a difference between the film thickness profile of the substrate before polishing and the target film thickness of the substrate. A next substrate is polished with a new optimized polishing recipe which is created based on a target polishing amount of the next substrate and a response model corrected by use of the optimized polishing recipe and film thickness profiles of the substrate before and after polishing.

Polishing apparatus and polishing method

An object of the present invention is to improve a substrate processing apparatus using the CARE method. The present invention provides a substrate processing apparatus for polishing a processing target region of a substrate by bringing the substrate and a catalyst into contact with each other in the presence of processing liquid. The substrate processing apparatus includes a substrate holding unit configured to hold the substrate, a catalyst holding unit configured to hold the catalyst, and a driving unit configured to move the substrate holding unit and the catalyst holding unit relative to each other with the processing target region of the substrate and the catalyst kept in contact with each other. The catalyst is smaller than the substrate.

Substrate processing apparatus, substrate processing system, and substrate processing method

An optical film-thickness measuring apparatus capable of eliminating an influence of a fluid flow on optical fiber cables when the fluid, such as pure water, is flowing through a through-hole of a polishing pad, and capable of achieving highly accurate measuring of a film thickness is disclosed. The optical film-thickness measuring apparatus includes: a light-emitting optical fiber cable coupled to a light source; a light-receiving optical fiber cable arranged to receive light reflected from the workpiece; a cable housing surrounding the light-emitting optical fiber cable and the light-receiving optical fiber cable; and a flow-passage structure defining a fluid passage adjacent to the light-emitting optical fiber cable and the light-receiving optical fiber cable. The light-emitting optical fiber cable and the light-receiving optical fiber cable are supported by at least one of the cable housing and the flow-passage structure.

Optical film-thickness measuring apparatus and polishing apparatus

A polishing apparatus which can measure a film thickness with high accuracy without affecting a polishing rate of a wafer is disclosed. The polishing apparatus includes: a polishing head configured to press a wafer against a polishing pad; an illuminating fiber having a distal end disposed in a flow passage formed in the polishing table; a spectrometer configured to resolve reflected light from the wafer in accordance with wavelength and measure an intensity of the reflected light at each of the wavelengths; a light-receiving fiber having a distal end disposed in the flow passage; a liquid supply line communicating with the flow passage; a gas supply line communicating with the flow passage; a liquid supply valve attached to the liquid supply line; a gas supply valve attached to the gas supply line; and an operation controller configured to control operations of the liquid supply valve and the gas supply valve.

To measure thickness in a polishing treatment more efficiently. A substrate polishing apparatus comprises a rotatably configured polishing table provided with a sensor that outputs a signal related to a thickness, a rotatably configured polishing head that faces the polishing table, a substrate being attachable to a face of the polishing head that faces the polishing table, and a controller. The controller acquires a signal from the sensor when the sensor passes over a surface to be polished of the substrate, specifies an orbit of the sensor with respect to the substrate on a basis of a profile of the signal, calculates a thickness of the substrate at each point on the orbit on a basis of the signal, and creates a thickness map on a basis of the calculated thickness at each point on a plurality of orbits of the sensor.

Substrate polishing apparatus, method of creating thickness map, and method of polishing a substrate

A substrate polishing method capable of reducing an influence of variation in spectrum of reflected light from a substrate, such as a wafer, and determining an accurate film thickness is disclosed. The method includes: polishing a surface of a substrate by pressing the substrate against a polishing pad on a rotating polishing table; producing a spectrum of reflected light from the surface of the substrate each time the polishing table makes one rotation; creating a three-dimensional data containing a plurality of spectra arranged along polishing time; and determining a film thickness of the substrate based on the three-dimensional data.

Polishing method and polishing apparatus

Various methods of cleaning a substrate are provided. In one aspect, method of cleaning a substrate, comprising: holding and rotating a substrate by a substrate holder; and supplying a chemical liquid to a chemical liquid nozzle and supplying two fluids to a two-fluid nozzle while moving the chemical-liquid nozzle and the two-fluid nozzle radially outwardly from the center to the periphery of the substrate, wherein the distance of the chemical-liquid nozzle from a rotating axis of the substrate holder is longer than the distance of the two-fluid nozzle from the rotating axis of the substrate holder while the chemical-liquid nozzle and the two-fluid nozzle are moved radially outwardly from the rotating axis of the substrate holder.

Method of cleaning a substrate

According to one aspect, a substrate processing apparatus is provided. The substrate processing apparatus includes a table provided with a substrate holding surface for holding a substrate, a pad for processing the substrate held on the table, a head for holding the pad, an actuator for moving the head in a direction perpendicular to the substrate holding surface of the table, and a mechanical stopper device for stopping a movement of the head in the direction perpendicular to the substrate holding surface.

Head height adjustment device and substrate processing apparatus provided with head height adjustment device

The present invention relates to a polishing method and a polishing apparatus for polishing a substrate such as a wafer while measuring a film thickness based on optical information included in reflected light from the substrate. The polishing method includes preparing a plurality of spectrum groups each containing a plurality of reference spectra corresponding to different film thicknesses; directing light to a substrate and receiving reflected light from the substrate; producing, from the reflected light, a sampling spectrum for selecting a spectrum group; selecting a spectrum group containing a reference spectrum which is closest in shape to the sampling spectrum; producing a measurement spectrum for obtaining a film thickness while polishing the substrate; selecting, from the selected spectrum group, a reference spectrum which is closest in shape to the measurement spectrum that has been produced when the substrate is being polished; and obtaining a film thickness corresponding to the selected reference spectrum.

A polishing method capable of obtaining a stable film thickness without being affected by a difference in measurement position is disclosed. The polishing method includes: rotating a polishing table that supports a polishing pad; pressing the surface of the wafer against the polishing pad; obtaining a plurality of film-thickness signals from a film thickness sensor during a latest predetermined number of revolutions of the polishing pad, the film thickness sensor being installed in the polishing table; determining a plurality of measured film thicknesses from the plurality of film-thickness signals; determining an estimated film thickness at a topmost portion of the raised portion based on the plurality of measured film thicknesses; and monitoring polishing of the wafer based on the estimated film thickness at the topmost portion of the raised portion.

Polishing method

A polishing apparatus capable of achieving a highly-precise polishing result is disclosed. The polishing apparatus includes an in-line film-thickness measuring device configured to measure a film thickness of the substrate in a stationary state, and an in-situ spectral film-thickness monitor having a film thickness sensor disposed in a polishing table, the in-situ spectral film-thickness monitor being configured to subtract an initial film thickness, measured by the in-situ spectral film-thickness monitor before polishing of the substrate, from an initial film thickness, measured by the in-line film-thickness measuring device before polishing of the substrate, to determine a correction value, add the correction value to a film thickness that is measured when the substrate is being polished to obtain a monitoring film thickness, and monitor a progress of polishing of the substrate based on the monitoring film thickness.

Polishing apparatus and polished-state monitoring method

The polishing device includes an edge chamber that presses the surface to be polished against the polishing pad by pressing a back side of the surface to be polished of the wafer, a thickness measuring unit that estimates a remaining film profile of the surface to be polished of the wafer in realtime during polishing, and a closed loop control device that controls a pressing force on the back side of the surface to be polished by the edge chamber in accordance with a measurement result by the thickness measuring unit during polishing. The closed loop control device controls not only the pressing by the edge chamber during polishing, but also the pressure of a retainer ring as a periphery of the edge chamber affecting the pressing of the surface to be polished against the polishing pad.

Growing community of inventors

Tokyo, Japan

Yoichi Shiokawa