Other

C. Itoh Fine Chemical Co., Ltd.

Nec Corporation

Kuraray Co., Ltd.

Tobi Col, Ltd.

Yoichi Murayama, Shincron Co., Ltd.

Yoichi Murayama

Koichi Saito

Hideki Kobayashi

Junji Nakagawa

Yasuhiko Yoshida

Tetsuya Nomachi

Kunihiro Kashiwagi

Toshio Narita

Akira Motoki

The present invention provides a method for producing a a high-performance black matrix taking the palce of a Cr film black matrix and a high-performance color display thin film, which is comprises steps of vaporizing one or more organic pigments or vaporizing and exciting a metal or an alloy together with said organic pigments, and forming a thin film or a mixed composite thin film onto a substrate by the plasma exciting deposition.

Method for producing a thin film resin matrix

A plasma vapor deposition apparatus which can form high-quality films of ITO, for example, with high productivity, includes a vapor deposition chamber, a drive and a horizontally rotating circular holding plate connected to the drive located in a lower portion of the chamber, the circular holding plate having a circular vapor source material mounting centered at the rotational axis about which the plate is rotated by the drive, and coil-shaped electrodes for exciting vapor produced by evaporating the vapor source material. A film thickness correcting plate is interposed between the holding plate and the path along which the substrate is transported through the chamber by a transporting device. This plate is configured to so shield a portion of the substrate so that an excess of excited vapor particles do not accumulate at a given site on the surface of the substrate. Moreover, independently evacuatable evacuating sections are provided upstream and downstream of the vapor deposition chamber to constitute a processing line. The transporting device transports the substrate continuously along a first path through the processing line from an inlet section to an outline section. On the other hand, a return mechanism returns the substrate from the outlet section to the inlet section along a second path disposed above the first path.

Plasma vapor deposition apparatus

The present invention provides a method of manufacturing an electromagnetic wave shielding plastic molding, which comprises the step of, without prior washing and without providing a primer layer, or after providing a water-soluble primer layer, forming a conductive layer comprising at least one selected from the group consisting of Al, Cu, Ni, Cr and Sn and alloys thereof by high-frequency excited plasma. The electromagnetic wave shielding plastic molding thus-produced has excellent in electromagnetic wave shielding effects, adhering strength, humidity resistance and hardness, has economic advantages, and hence is useful as an electromagnetic wave shield for a plastic molding, such as the housing for a portable telephone.

Method of manufacturing electromagnetic wave shielding plastic molding

A chip-in-glass type vacuum fluorescent display device includes an integrated circuit chip for driving a display unit in a vacuum glass envelope. The integrated circuit chip is connected to plural number of external terminals to be supplied with an electric power from an external power supply, so that resistances of the external terminals themselves, and those of the connecting points of the external terminals and conductor patterns which connect the terminals to the integrated circuit chip. As a result, the potential change at pads of the integrated circuit chip, which causes unstableness in operation of the integrated circuit and changes of characteristics thereof, is decreased.

Vacuum fluorescent display device

A thin film capacitor composed of a hybrid dielectric thin film that is sandwiched by a pair of electrodes. The hybrid dielectric thin film is obtained by complexing or accumulating first and second regions. The first region is derived from an ion plating source and the second region is derived from another ion plating source containing an auxiliary material to be coupled with the first region, both being obtained through an ion plating process. The use of the auxiliary material ensures a pinhole-free hybrid dielectric thin film.

Thin film capacitor and apparatus for manufacturing same

A conductive thin film is deposited on the surface of plastic film moving at high velocity by ion-plating using a pressure-gradient discharge. The moving velocity of the substrate film is as high as 8 to 30m/min. A conductive, thin film composed of indium oxide, tin oxide, TTD and similar substances is deposited on the plastic film, at a pressure of 1.times.10.sup.-5 to 1.times.10.sup.-1 Torr and a discharge voltage of 50 to 100 V.

Process for manufacturing transparent, conductive film

Disclosed is a levelshift circuit comprising a P-channel MOS transistor wherein the source is connected to a high power potential in a low-voltage power circuit, a first N-channel double-diffused field effect transistor wherein the source is connected to a ground potential and the gate and drain are shorted with each other and connected to the drain of the P-channel MOS transistor, a second N-channel double-diffused field effect transistor wherein the structure is the same as that of the first N-channel double-diffused field effect transistor or different only in its gate width at a predetermined ratio from that of the first N-channel double-diffused field effect transistor, the source is connected to the ground potential and the gate is connected to the gate and drain of the second N-channel double-diffused field effect transistor, a PNP transistor wherein the emitter is connected to the high power potential in the high-voltage power circuit, the base is connected to the drain of the second N-channel double-diffused transistor and the collector is connected to a load, and a switch whereby the gate and drain of the first N-channel double-diffused field effect transistor is short-circuited or opened with respect to the ground potential.

Bi-MOS levelshift circuit capable of controlling power consumption

Metal tellurium is vaporized under the atmosphere of oxygen gas and/or inert gas formed into a plasma by a high frequency power to thereby form a tellurium oxide (TeOx, 0.ltoreq.X.ltoreq.2) layer. The tellurium oxide layer formed in accordance with the present method is stabilized, and a suboxide having a high sensitivity which has been considered to be unsuitable as an optical recording medium due to the lack of stability can be utilized. High frequency power, gas pressure and vaporization speed of metal tellurium can be varied to thereby vary the value X of TeOx from 0 to 2. When the TeOx films whose value X thicknesswise is different are formed continuously within one and the same vessel and the vaporization speed is made to zero, oxidization of a film surface may be carried out. Thereby, the TeO.sub.2 film may be formed on the surface, and an optical recording medium may be obtained which is extremely stable and has excellent adhesive properties between the substrates and between the layers.

Optical recording medium formed of chalcogenide oxide and method for

Chalcogenide suboxide, particularly tellurium oxides TeOx, are possible to reversibly change optical characteristics by changing power of irradiating light to repeat recording and erasure. If the TeOx is x&lt;1, high sensitivity is obtained but the characteristic of film is greatly deteriorated due to the environment. In accordance with this invention there is proposed a film which can be used as an optical recording medium having a high sensitivity and a high stability under the conditions that a partial pressure of oxygen is in the range from 1.times.10.sup.-4 -9.times.10.sup.-3 Torr and a high frequency power for forming a plasma in the range of 50-500 W and wherein the TeOx film is formed by metal tellurium vapor passing through a plasma of oxygen gas.

Growing community of inventors

Tokyo, Japan

Yoichi Murayama