Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Tokyo Electron Sagami Limited

Tokyo Electron Yamanashi and Daihen Corporation

Yoichi Kurono

Shigeki Tozawa

Shozo Hosoda

Michio Taniguchi

Shigeru Handa

Hiroyuki Yoshiki

Masami Kubota

An apparatus for subjecting a semiconductor wafer having an uncovered marginal portion, from which a photoresist film is removed, to an anisotropic etching. The apparatus comprises a process chamber which can be set to a vacuum. Upper and lower electrodes opposite to each other are provided in the process chamber. An etching gas is made into plasma between these electrodes. An electrostatic chuck is arranged on the lower electrode. A wafer is mounted on the electrostatic chuck. A ring made of dielectric material, movable upward and downward, is arranged between the electrodes. A central portion of the ring is formed as a hood having a recessed shape corresponding to the marginal portion of the wafer. During the etching, the hood covers the marginal portion of the wafer under a plasma sheath, so as to be out of contact with the wafer, thereby preventing the marginal portion of the wafer from being etched.

Plasma processing apparatus

Plasma processing apparatus and method

In a plasma processing s including a processing chamber and plate-parallel electrodes, provided in the processing chamber, for generating a high-frequency electric field in response to a high-frequency voltage, a ring-shaped core is provided in the periphery of the processing chamber, and a toroidal coil includes a plurality of 2n split coils wound in all the periphery of the ring-shaped core so that each pair of split coils oppose to each other. An alternating-current power source for generating a plurality of n-phase alternating-current currents including a plurality of n currents having a phase difference of either .pi./n or 2.pi./n therebetween, is electrically connected with the plurality of split coils of the toroidal coil so that two magnetic fields generated by the each pair of split coils opposing to each other are directed in the same direction in parallel to each other in the processing chamber, and the plurality of currents are respectively flowed into the respective pairs of split coils opposing to each other, thereby generating a rotating magnetic field in parallel to surfaces of the plane-parallel electrodes.

Plasma processing apparatus comprising means for generating rotating

An ashing apparatus of the vertical type comprises a reaction tube erected in the vertical direction to house therein a plurality of semiconductor wafers, an inner tube arranged in the reaction tube to enclose the semiconductor wafers and having a plurality of holes through which activated radicals in plasma can be selectively passed, a reaction gas supply pipe for supplying reaction gases into a space between the reaction tube and the inner tube, and plasma generating electrode unit located outside the reactor tube to generate plasma of the reaction gases only in the space between the reaction tube and the inner tube.

Vertical type processing apparatus

Growing community of inventors

Yamanashi-ken, Japan

Yoichi Kurono