Tokyo Electron Limited

Fujikin Inc.

Tokyo Electron Limi Ted

Yohei Uchida

Yasuharu Sasaki

Jun Hirose

Tetsuji Sato

Taira Takase

Tsuyoshi Hida

Shuhei Yamabe

Shojiro Yahata

Naoki Sugawa

Katsushi Abe

Nobukazu Ikeda

Kouji Nishino

Ryousuke Dohi

Takahiro Matsuda

Shoichiro Matsuyama

Hidetoshi Hanaoka

Junichi Sasaki

Mutsunori Koyomogi

Takehiro Tanikawa

Ayuta Suzuki

Kazuyuki Tezuka

Masato Takayama

Toshiya Tsukahara

Tomoya Ujiie

Yosuke Tamura

Takahiro Yamamoto

Yusuke Mizuno

Hikaru Abe

Kota Yachi

A mounting table includes a wafer mounting surface mounting a wafer, a ring mounting surface disposed at a radially outer side of the wafer mounting surface and mounting a first ring having a first engaging portion and a second ring having a second engaging portion to be engaged with the first engaging portion, a lifter pin, and a driving mechanism. The second ring has a through-hole extends to reach a bottom surface of the first engaging portion, and the ring mounting surface has a hole at a position corresponding to the through-hole. A lifter pin has a first holding part that fits into the through-hole and a second holding part that extends from the first holding part and has a part protruding from the first holding part. The lifter pin is accommodated in the hole, and a driving mechanism vertically moves the lifter pin.

Plasma processing apparatus and mounting table thereof

An electrostatic chuck according to an exemplary embodiment includes a first region and a second region. The first region has a first upper surface. The first region is configured to hold a substrate disposed on the first upper surface. The second region has a second upper surface. The second region extends in a circumferential direction to surround the first region. The second region is configured to support a focus ring mounted on the second upper surface. The first upper surface and the second upper surface extend along a single flat surface. The first region and the second region provide a space therebetween to separate the first upper surface and the second upper surface from each other.

Electrostatic chuck, focus ring, support base, plasma processing apparatus, and plasma processing method

A plasma processing apparatus includes a chamber; a wall member; an insulating member; and a ground member. The wall member is partially placed in an internal space of the chamber and exposed to a space at an outside of the chamber. The insulating member is provided on the wall member. The ground member is made of silicon, provided in the internal space and mounted on the insulating member. The wall member is configured to support the ground member in a non-contact state with the insulating member therebetween. The ground member is in contact with a spherical surface of the insulating member and mounted on the spherical surface.

Plasma processing apparatus

A placement apparatus for placing a workpiece is provided. The placement apparatus includes a stage on which a workpiece can be placed in a processing vessel; an edge ring including a locking part which is disposed on the stage so as to surround a periphery of the workpiece; a conductive connecting member connected with the edge ring at the locking part; and a first contacting member configured to cause the edge ring to contact the stage, while the edge ring is connected with the connecting member.

Workpiece placement apparatus and processing apparatus

A plasma processing apparatus includes a cooling plate having a fixing surface to which an upper electrode is fixed, the cooling plate having, on the fixing surface, an electrostatic chuck configured to attract the upper electrode by an attraction force generated by an applied voltage; a power supply configured to apply the voltage to the electrostatic chuck; and a power supply controller configured to control the power supply such that an absolute value of the voltage applied to the electrostatic chuck is increased based on a degree of consumption of the upper electrode.

Plasma processing apparatus and plasma processing method

Focus ring

A substrate support for a plasma processing apparatus includes a first support area configured to support a substrate placed thereon; a second support area configured to support a focus ring placed thereon, and extending in a circumferential direction outward in a radial direction with respect to the first support area; a conductive structure configured to be connected to the focus ring; and a holder configured to hold the connection member to press the connection member downward, and also to cause the connection member to press the surface of the focus ring. The conductive structure includes a first conductive path which provides a terminal area outward in the radial direction with respect to the second support area, and a connection member configured to electrically connect the focus ring and the terminal area, and disposed on the terminal area to face a surface of the focus ring.

Substrate support, plasma processing apparatus, and focus ring

A plasma processing apparatus includes a processing chamber where a plasma processing is performed on a workpiece, a stage, an edge ring, a shield, and a driver. The stage has a placement surface on which the workpiece is placed inside the processing chamber. The edge ring is provided around the stage so as to surround the workpiece on the placement surface. The shield is capable of shielding a portion of the surface of the edge ring from plasma generated in the processing chamber. The driver changes the area of the edge ring exposed to the plasma by moving the shield relative to the edge ring.

A power feed structure includes a first connecting member group and a ring-shaped first terminal member. The first connecting member group includes a plurality of first connecting members arranged along a circumferential direction of a focus ring disposed in a processing chamber of a plasma processing apparatus to apply a bias potential to the focus ring. The ring-shaped first terminal member is electrically connected to the first connecting members.

Power feed structure and plasma processing apparatus

A plasma processing apparatus includes a processing vessel, a lower electrode, an annular member, an inner upper electrode, an outer upper electrode, a processing gas supply, a first high frequency power supply and a first DC power supply. The lower electrode is configured to place a processing target substrate. The annular member is disposed on an outer peripheral portion of the lower electrode. The inner upper electrode is disposed to face the lower electrode. The outer upper electrode is disposed at an outside of the inner upper electrode. The first high frequency power supply applies a first high frequency power. The first DC power supply applies a first variable DC voltage to the outer upper electrode. At least a part of a surface of the outer upper electrode exposed to the processing space is located higher than a surface of the inner upper electrode exposed to the processing space.

A gas supply device of supplying a gas into a processing space from a gas supply source includes a facing plate that faces the processing space and includes multiple through holes; multiple gas distribution plates; and a cover plate. The facing plate, the gas distribution plates, and the cover plate are stacked in sequence. In a surface, which faces the facing plate, of the gas distribution plate closest to the facing plate, multiple gas diffusion spaces including a first gas diffusion space and a second gas diffusion space are formed, and in each of the gas distribution plates, a first gas supply path through which a processing gas or an additional gas is supplied into the first gas diffusion space and a second gas supply path through which the processing gas or the additional gas is supplied into the second gas diffusion space are formed.

Gas supply device and substrate processing apparatus

Growing community of inventors

Miyagi, Japan

Yohei Uchida