Applied Materials, Inc.

Yogita Pareek

Prerna Sonthalia Goradia

Geetika Bajaj

Kevin A Papke

Ankur Kadam

Dmitry Lubomirsky

Laksheswar Kalita

Bipin Thakur

Yixing Lin

Nitin K Ingle

Robert Jan Visser

Andrew C Kummel

Mats Larsson

Sung Je Kim

Jianqi Wang

Kaushik Vaidya

Emily Sierra Thomson

Mahmut Sami Kavrik

Embodiments of the disclosure provide methods for fabricating or otherwise forming a protective coating containing cerium oxide on processing chamber surfaces and/or components, such as surfaces which are exposed to a plasma within a processing chamber. In one or more embodiments, a method of forming a protective coating within a processing chamber includes depositing a cerium oxide layer on a chamber surface or a chamber component during an atomic layer deposition (ALD) process. The ALD process includes sequentially exposing the chamber surface or the chamber component to a cerium precursor, a purge gas, an oxidizing agent, and the purge gas during an ALD cycle, and repeating the ALD cycle to deposit the cerium oxide layer.

Methods for forming a protective coating on processing chamber surfaces or components

A method of forming a protective coating film for halide plasma resistance includes depositing a seed layer on a surface of an article via an atomic layer deposition (ALD) process, depositing a rare-earth containing oxide layer on the seed layer via an ALD process, and exposing the rare-earth containing oxide layer to fluorine-containing plasma.

Method for forming a protective coating film for halide plasma resistance

Embodiments of the disclosure provide a chamber component for use in a plasma processing chamber apparatus. The chamber component may include a coating layer that provides a fluorine-rich surface. In one embodiment, a chamber component, for use in a plasma processing apparatus, includes a body having an outer layer comprising yttria having a coating layer formed thereon, wherein the coating layer comprises a yttrium fluoride containing material.

Chemical conversion of yttria into yttrium fluoride and yttrium oxyfluoride to develop pre-seasoned corossion resistive coating for plasma components

Exemplary methods for selective etching of semiconductor materials may include flowing a fluorine-containing precursor into a processing region of a semiconductor processing chamber. The methods may also include flowing a silicon-containing suppressant into the processing region of the semiconductor processing chamber. The methods may further include contacting a substrate with the fluorine-containing precursor and the silicon-containing suppressant. The substrate may include an exposed region of silicon nitride and an exposed region of silicon oxide. The methods may also include selectively etching the exposed region of silicon nitride to the exposed region of silicon oxide.

Selective nitride removal

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Method for forming yttrium oxide on semiconductor processing equipment

The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment

A process for generating a compact alumina passivation layer on an aluminum component includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to concentrated nitric acid, at a temperature below 10&#xb0; C., for one to 30 minutes. The process also includes rinsing the component in deionized water for at least one minute, drying it for at least one minute, and exposing it to NHOH for one second to one minute. The process further includes rinsing the component in deionized water for at least one minute and drying it for at least one minute. A component for use in a plasma processing system includes an aluminum component coated with an AlOfilm having a thickness of 4 to 8 nm and a surface roughness less than 0.05 &#x3bc;m greater than a surface roughness of the component without the AlOfilm.

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San Jose, CA, United States of America

Yogita Pareek