Applied Materials, Inc.

Other

Yixing Lin

Clifford Stow

Shun Jackson Wu

Jennifer Y Sun

Hong Peng Wang

Senh Thach

Kevin A Papke

Brian T West

Dmitry Lubomirsky

Prerna Sonthalia Goradia

Siamak Salimian

Geetika Bajaj

Yikai Chen

Laksheswar Kalita

Ankur Kadam

Yogita Pareek

Bipin Thakur

Dajiang Xu

Ananda H Kumar

Lin Zhang

Robert W Wu

Shuran Sheng

Ramesh Gopalan

Joseph C Werner

Jianqi Wang

Stanley Wu

Kaushik Vaidya

Chien-Min Liao

Ying Ma

William Ming-ye Lu

Boon Sen Chan

Hsiu Yang

Tasnuva Tabassum

Jiyong Huang

Yi Nung Wu

Daijiang Xu

Mahesh Adinath Kanawade

Chi-Feng Liu

Methods and apparatus for a baking chamber for processing a chamber component are provided herein. In some embodiments, a baking chamber includes: an enclosure defining a first chamber, wherein the first chamber comprises: a first chamber body having a first floor and first sidewalls that couple the first floor to a first lid of the first chamber body to define a first interior volume; a first support disposed in the first interior volume; a first gas line disposed in the first interior volume proximate the first lid; a first showerhead disposed between the first gas line and the first support; a first exhaust coupled to the first floor; and a first heater disposed in the first interior volume between the first support and the first floor; and wherein the enclosure includes a door configured to facilitate transferring the chamber component into and out of the enclosure.

High throughput and metal contamination control oven for chamber component cleaning process

Embodiments of the present disclosure generally relate to an apparatus and a method for cleaning a processing chamber. In one embodiment, a substrate support cover includes a bulk member coated with a fluoride coating. The substrate support cover is placed on a substrate support disposed in the processing chamber during a cleaning process. The fluoride coating does not react with the cleaning species. The substrate support cover protects the substrate support from reacting with the cleaning species, leading to reduced condensation formed on chamber components, which in turn leads to reduced contamination of the substrate in subsequent processes.

Substrate support cover for high-temperature corrosive environment

Disclosed herein is a poly-crystalline protective coating on a surface of a chamber component. The poly-crystalline protective coating may be deposited by thermal spraying and may comprise cubic yttria and monoclinic yttria. At least one of: (1) the ratio of the cubic yttria to monoclinic yttria, (2) the crystallite size of at least one of the cubic yttria or the monoclinic yttria, (3) the atomic ratio of oxygen (O) to yttria (Y), and/or (4) the dielectric properties of the poly-crystalline protective coating may be controlled to obtain consistent chamber performance when switching coated chamber components within a chamber of interest.

Protective yttria coating for semiconductor equipment parts

The implementations described herein generally relate to 30 nm in-line liquid particle count testing equipment which analyses and cleans semiconductor processing equipment. More specifically, the implementations described relate to a system for diluting, analyzing, and modifying fluids to enable the observation of the contents of the fluids. A dilution sampling tool is coupled with a liquid particle detector for reading the contents of an extraction solution containing particles from semiconductor processing equipment, such as a liner, a shield, a faceplate, or a showerhead, in a cleaning tank. As such, accurate liquid particle readings may be had which reduce oversaturation of the particle detector.

30 nm in-line LPC testing and cleaning of semiconductor processing equipment

The present disclosure generally relates to methods of electro-chemically forming yttria or yttrium oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of yttria or yttrium oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited yttria or yttrium oxide thereon.

Method for forming yttrium oxide on semiconductor processing equipment

The present disclosure generally relates to methods of electro-chemically forming aluminum or aluminum oxide. The methods may include the optional preparation of a an electrochemical bath, the electrodepositon of aluminum or aluminum oxide onto a substrate, removal of solvent form the surface of the substrate, and post treatment of the substrate having the electrodeposited aluminum or aluminum oxide thereon.

Aluminum electroplating and oxide formation as barrier layer for aluminum semiconductor process equipment

A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers, the first coating layer comprising a first material having a first thermal expansion coefficient and a first surface having an average surface roughness of less than about 25 micrometers. The second coating layer is over the first surface of the first coating layer, the second coating layer comprising a second material having a second thermal expansion coefficient that differs by less than 5% from the first thermal expansion coefficient of the first material and a second surface having an average surface roughness of at least about 50 micrometers.

Process chamber component with layered coating and method

A component of a process chamber is refurbished and cleaned to remove an intermetallic compound from the component. The component has a structure having a coating that includes a first metal layer over the intermetallic compound. To refurbish the component, the first metal layer is removed to form an exposed surface that at least partially includes the intermetallic compound. The exposed surface is bead blasted in a penetrative bead blasting step by propelling blasting beads having a bead diameter of less than about 180 micrometers with a gas that is pressurized to a pressure of less than about 310 kPa (45 psi), towards the exposed surface, thereby removing the intermetallic compound from the exposed surface of the structure to form a cleaned surface. A second metal layer is then formed over the cleaned surface.

Cleaning and refurbishing chamber components having metal coatings

A substrate processing chamber component is capable of being exposed to an energized gas in a process chamber. The component has an underlying structure and first and second coating layers. The first coating layer is formed over the underlying structure, and has a first surface with an average surface roughness of less than about 25 micrometers. The second coating layer is formed over the first coating layer, and has a second surface with an average surface roughness of at least about 50 micrometers. Process residues can adhere to the surface of the second coating layer to reduce the contamination of processed substrates.

We have discovered a method of producing a complex-shaped aluminum alloy article, where welding has been employed to form the article, where an anodized aluminum coating is produced over a surface of the article including the weld joint, and where the anodized aluminum coating is uniform, providing improved performance over that previously known in the art for welded articles exposed to a corrosive plasma environment.

Semiconductor processing apparatus including plasma-resistant, welded aluminum structures

We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film can be controlled by maintaining the content of mobile impurities within a specific range and controlling the particulate size and distribution of the mobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330&#xb0; C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

Halogen-resistant, anodized aluminum for use in semiconductor processing apparatus

We have discovered that the formation of particulate inclusions at the surface of an aluminum alloy article, which inclusions interfere with a smooth transition from the alloy surface to an overlying aluminum oxide protective film, can be controlled by maintaining the content of mobile and nonmobile impurities within a specific range and controlling the particulate size and distribution of the mobile and nonmobile impurities and compounds thereof; by heat-treating the aluminum alloy at a temperature less than about 330&#xb0; C.; and by creating the aluminum oxide protective film by employing a particular electrolytic process. When these factors are taken into consideration, an improved aluminum oxide protective film is obtained.

To further enhance the chamber material performance of anodized aluminum alloy materials against fluorine and oxygen plasma attack, a ceramic-based surface coating, high purity yttrium oxide coating, is provided on the anodized aluminum alloy parts.

Yttrium oxide based surface coating for semiconductor IC processing vacuum chambers

We have discovered that the formation of particulate inclusions at the surface and the interior of an aluminum alloy article interferes with the performance of the article when a surface of the article is protected by an anodized coating. We have also discovered that the formation of such particulate inclusions can be controlled to a large extent by controlling the concentration of particular impurities present in the alloy used to fabricate the aluminum alloy article.

Growing community of inventors

Saratoga, CA, United States of America

Yixing Lin