Tongji University

Yingna Chen

Qian Cheng

Yiming Chen

Haonan Zhang

Shiying Wu

Mengjiao Zhang

Ya Gao

Weiya Xie

A method for testing a lifetime of a surface state carrier of a semiconductor, including the following steps, 1) a narrow pulse light source is used to emit a light pulse, and coupled to an interior of a near-field optical probe, and the near-field optical probe produces a photon-generated carrier on a surface of a semiconductor material under test through excitation. 2) The excited photon-generated carrier is concentrated on the surface of the semiconductor material, and recombination is conducted continuously with a surface state as a recombination center. 3) A change in a lattice constant is produced due to an electronic volume effect, a stress wave is produced, and a signal of the stress wave is detected in a high-frequency broadband ultrasonic testing mode. 4) Fitting calculation is conducted on the signal of the stress wave to obtain the lifetime of the surface state carrier &#x3c4;.

Method for testing lifetime of surface state carrier of semiconductor

Growing community of inventors

Shanghai, China

Yingna Chen