Applied Materials, Inc.

Ying Yu

Joseph Yudovsky

Ling Chen

Lawrence C Lei

Henry Ho

Steven Yencheng Chen

John M White

Srinivas D Nemani

Li-Qun Xia

Juan Carlos Rocha-Alvarez

Michael Xiaoxuan Yang

Shankar Venkataraman

Karl Anthony Littau

Chien-Teh Kao

Michael N Sugarman

Maosheng Zhao

A brush mounting system for a wafer scrubbing device includes a brush mandrel and a mounting assembly on which the brush mandrel is mounted. The mounting assembly includes a mounting member adapted to be mounted to a wall of the wafer scrubbing device, and a bearing secured to the mounting member. A brush support is rotatably mounted on the bearing and has an outer end that includes a contact surface adapted to contact the brush mandrel. The contact surface has a spherical profile. The brush mandrel includes a corresponding contact surface having a spherical profile, so that the brush mandrel and the mounting assembly form a spherical joint at the point of contact.

Wafer scrubbing device having brush assembly and mounting assembly forming spherical joint

A method of depositing a low dielectric constant film on a substrate. In one embodiment, the method includes the steps of positioning the substrate in a deposition chamber, providing a gas mixture to the deposition chamber, in which the gas mixture is comprised of one or more cyclic organosilicon compounds, one or more aliphatic compounds and one or more oxidizing gases. The method further includes reacting the gas mixture in the presence of an electric field to form the low dielectric constant film on the semiconductor substrate. The electric field is generated using a very high frequency power having a frequency in a range of about 20 MHz to about 100 MHz.

Plasma enhanced CVD low k carbon-doped silicon oxide film deposition using VHF-RF power

The invention provides methods and apparatuses of forming a silicon nitride layer on a semiconductor wafer. A semiconductor wafer is located on a susceptor within a semiconductor processing chamber. A carrier gas, a nitrogen source gas, and a silicon source gas are introduced into the semiconductor processing chamber and a semiconductor wafer is exposed to the mixture of gases at a pressure in the chamber in the range of approximately 100 to 500 Torr.

Method of forming a silicon nitride layer on a substrate

A method and apparatus for directing a process gas through a processing apparatus, such as a vapor deposition chamber. The apparatus comprises a pumping plate for a processing chamber having an annular body member wherein said body member has a first portion and a second defining a circumferential edge and a central opening. The first portion comprises a sidewall of the circumferential edge having a plurality of circumferentially spaced through holes and the second portion has comprises a lateral portion that protrudes from the circumferential edge, such that, in a processing chamber, the first portion defines a first gas flow region comprising the central opening and a second gas flow region comprising the lateral portion of the second portion.

Method and apparatus for directing constituents through a processing chamber

A method for aligning a wafer on a support member within a vacuum chamber includes increasing the pressure within the vacuum chamber to at least about 1 Torr before aligning the wafer. The wafer is introduced into the vacuum chamber on the support member, the pressure is increased to at least about one Torr, and the support member is lifted into a shadow ring that has a frustoconical inner cavity constructed to funnel the wafer to a centered, aligned position.

Apparatus for aligning a wafer

Method for aligning a wafer

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Cupertino, CA, United States of America

Ying Yu