Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Hua Chen

Wen-Chen Lu

Lee-Chuan Tseng

Feng-Jia Shiu

Kuo-Chyuan Tzeng

Jui-Yu Pan

Hau-Yan Lu

A method for fabricating a photonic package device is provided. The method includes patterning a semiconductor layer of a semiconductor-on-insulator (SOI) substrate into a waveguide structure and at least one first semiconductor pillar; forming a metal-dielectric stack over the waveguide structure and the first semiconductor pillar; etching an opening in the metal-dielectric stack to expose the first semiconductor pillar; etching an insulator layer of the SOI substrate to form at least one insulator cap below the first semiconductor pillar; and etching a base semiconductor substrate of the SOI substrate to form at least one second semiconductor pillar below the insulator cap.

Photonic package device and method for fabricating the same

In a method of manufacturing a semiconductor device, a first interlayer dielectric (ILD) layer is formed over a substrate, a CMP stop layer is formed over the first ILD layer, a trench opening is formed by patterning the CMP stop layer and the first ILD layer, an underlying first process mark is formed by forming a first conductive layer in the trench opening, a lower dielectric layer is formed over the underlying first process mark, a middle dielectric layer is formed over the lower dielectric layer, an upper dielectric layer is formed over the middle dielectric layer, a planarization operation is performed on the upper, middle and lower dielectric layers so that a part of the middle dielectric layer remains over the underlying first process mark, and a second process mark by the lower dielectric layer is formed by removing the remaining part of the middle dielectric layer.

Methods of manufacturing semiconductor device and semiconductor device

The present disclosure relates to integrated circuit device manufacturing processes. A self-aligned double patterning method is provided. In the method, a lithography process for line cut that determines the locations of line termini is performed after forming a spacer layer alongside the mandrel and prior to stripping the mandrel. The lithographic mask for the line cut is aligned to the mandrel and the spacer layer using a mark made of the mandrel material and the spacer material. Compared to the previous approach where the line cut process is performed after the mandrel removal, in the disclosed approach, the line termini mask is made of the mandrel material and the spacer material, and is more distinguishable compared to a mark made of just the spacer material. Thereby, the methods provide robust photo alignment signal for the line cut photolithography and precise positioning of the line termini mask.

Growing community of inventors

Hsinchu, Taiwan

Ying-Hua Chen