Baker Hughes Corporation

Freescale Semiconductor,inc.

Ying H Tsang

Renee Tong Mo

Sunder Ramachandran

Daniel J Jaeger

Todd Christopher Bailey

Vladimir Jovancicevic

James Kenyon Schaeffer, Iii

Philippe Prince

Jianzhong Yang

Eric D Luckowski

Michael P Squicciarini

Kyle C Cattanach

Amy L Child

Hydrogen sulfide (HS) and/or mercaptan scavengers are chemicals that remove HS and/or mercaptans from gas, oil and water. Water-based formulations may be made and used employing scavenging compounds having the formulae: wherein each R, R, R, and Rare the same or different and are selected from the group consisting of hydrogen, an alkyl, an alkenyl, an aryl, an acyl, a halogen, a hydroxyl, a nitro, an alkyl ester, an aryl ester, an alkyl ether, an aryl ether, a hydroxymethyl, an anhydride group, an amino, and a sulfide. In one non-limiting embodiment the compounds (A) and (B) do not contain nitrogen atoms. Water-based formulations, such as those using a protic solvent with the above compounds, work well as HS scavengers.

Water-based formulation of H2S/mercaptan scavenger for fluids in oilfield and refinery applications

A method and apparatus are described for fabricating metal gate electrodes () over a high-k gate dielectric layer () having a rare earth oxide capping layer () in at least the NMOS device area by treating the surface of a rare earth oxide capping layer () with an oxygen-free plasma process () to improve photoresist adhesion, forming a patterned photoresist layer () directly on the rare earth oxide capping layer (), and then applying a wet etch process () to remove the exposed portion of the rare earth oxide capping layer () from the PMOS device area.

Method of enhancing photoresist adhesion to rare earth oxides

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Katy, TX, United States of America

Ying H Tsang