International Business Machines Corporation

Advanced Micro Devices Corporation

Globalfoundries Inc.

Ying H Tsang

Keith Kwong Hon Wong

Michael Patrick Chudzik

Naim Moumen

Rashmi Jha

Kisik Choi

Michael John Hargrove

George Jonathan Kluth

Richard J Carter

Balgovind Sharma

Methods for removing a photoresist from a metal-comprising material are provided. In accordance with an exemplary embodiment of the present invention, the method comprises applying to the photoresist a substantially non-aqueous-based solvent having a pH no less than about 9 or no pH and subsequently applying to the metal-comprising material an aqueous-based fluid having a pH no less than about 9.

Methods for removing a photoresist from a metal-comprising material

Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N/H) or ammonia (NH) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N/H) or a plasma ammonia (NH), no apparent organic residual is observed.

Method for forming dual high-K metal gate using photoresist mask and structures thereof

Methods for forming a semiconductor device comprising a semiconductor substrate are provided. In accordance with an exemplary embodiment, a method comprises forming a channel layer overlying the semiconductor substrate, forming a channel capping layer having a first surface overlying the channel layer, oxidizing the first surface of the channel capping layer, and depositing a high-k dielectric layer overlying the channel capping layer.

Method of forming a semiconductor device

Method for forming dual high-k metal gate using photoresist mask and structures thereof

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Newburgh, NY, United States of America

Ying H Tsang