Taiwan Semiconductor Manufacturing Comp. Ltd.

Ying-Chuen Wang

Ming-Hsi Yeh

Kuo-Bin Huang

Chieh-Yi Shen

Meng-Hsien Li

Li-min Chen

A wet etching chemistry to selectively remove a polymer residue on an opening embedded in a low-k dielectric layer and an underlying stop layer in a process of forming an interconnect structure is provided. The wet etching chemistry includes: two type of organic solvents, wherein a concentration of the two type of organic solvents is greater than or equal to 70%; an Alkali source amine, at least comprising a tertiary amine; an inhibitor; and water. In some embodiment, the wet etching chemistry is free of a peroxide to avoid damage to the WdC hard mask.

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Taichung, Taiwan

Ying-Chuen Wang