Taiwan Semiconductor Manufacturing Comp. Ltd.

Yin-Hua Chen

Wen-Chih Chiou

Tsang-Jiuh Wu

Ku-Feng Yang

Yung-Chi Lin

Ebin Liao

Yen-Hung Chen

A device including a first dielectric layer on a semiconductor substrate, a gate electrode formed in the first dielectric layer, and a through-substrate via (TSV) structure penetrating the first dielectric layer and extending into the semiconductor substrate. The TSV structure includes a conductive layer, a diffusion barrier layer surrounding the conductive layer and an isolation layer surrounding the diffusion barrier layer. A capping layer including cobalt is formed on the top surface of the conductive layer of the TSV structure.

Methods for forming a device having a capped through-substrate via structure

Device with capped through-substrate via structure

Growing community of inventors

Yuanlin, Taiwan

Yin-Hua Chen