Disco Corporation

Yihui Lee

Kenji Furuta

Yohei Yamashita

Jinyan Zhao

A method of processing a warped workpiece includes a warpage eliminating step of applying a laser beam whose wavelength is transmittable through the workpiece to the workpiece while positioning a focused spot of the laser beam in the workpiece at a predetermined first position thicknesswise across the workpiece, thereby forming modified layers in the workpiece and cracks extending from the modified layers to a lower surface of the workpiece along all of projected dicing lines on the workpiece, thereby eliminating the warpage from the workpiece, and a modified layer forming step of, after the warpage eliminating step, applying the laser beam to the workpiece while positioning the focused spot of the laser beam in the workpiece at a position above the first position away from the lower surface of the workpiece, thereby forming modified layers in the workpiece along the projected dicing lines.

Method of processing workpiece

A wafer processing method for dividing a wafer into individual device chips along division lines is disclosed. The wafer processing method includes a back grinding step of grinding the back side of the wafer in the condition where a protective tape is attached to the front side of the wafer, thereby reducing the thickness of the wafer to a predetermined thickness, and a reinforcing insulation seal mounting step of mounting a reinforcing insulation seal capable of transmitting infrared light on the back side of the wafer. The wafer processing method further includes a modified layer forming step of applying a laser beam along each division line to thereby form a modified layer inside the wafer along each division line and a wafer dividing step of applying an external force to the wafer to thereby divide the wafer into the individual device chips along each division line.

Wafer processing method

A method of processing a wafer having a device area where a plurality of devices are formed and a peripheral marginal area surrounding the device area on the front side of the wafer is disclosed. The devices are formed in regions defined by division lines. Each device has a plurality of bump electrodes on the front side. A first laser beam is applied through dicing tape from the back side along the boundary between the device area and the peripheral marginal area, with the focal point of the first laser beam set inside the wafer, thereby forming an annular modified layer inside the wafer. A second laser beam is applied through the dicing tape from the back side along each division line with the focal point of the second laser beam set inside the wafer, thereby forming a modified layer inside the wafer along each division line.

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Tokyo, Japan

Yihui Lee