Taiwan Semiconductor Manufacturing Comp. Ltd.

Yih Song Chiu

Yi-Wei Chiu

Ching-Chung Su

Pin Chia Su

Kuo-Hsiu Wei

Jao Sheng Huang

Chih-Cherng Jeng

Wen Ting Tsai

Tzu Chan Weng

Chen Hsiang Leu

A method of measuring dimensional characteristics includes providing a substrate and forming a reflective layer over the substrate. A dielectric layer is then formed over the reflective layer. The dielectric layer includes a grating pattern and a resistivity test line inset in a transparent region. Radiation is then directed onto the dielectric layer so that some of the radiation is transmitted through the transparent region to the reflective layer. A radiation pattern is then detected from the radiation reflected and scattered by the metal grating pattern. The radiation pattern is analyzed to determine a first dimensional information. Then the resistance of the resistivity test line is measured, and that resistance is analyzed to determine a second dimensional information. The first and second dimensional informations are then compared.

Feature dimension measurement

A method for forming shallow trench isolation (STI) structure including providing a substrate comprising an overlying hardmask layer; patterning the hardmask layer to form a hardmask layer opening for etching a trench through a substrate thickness portion; etching a trench according to the patterned overlying hardmask layer; carrying out a wet chemical oxidizing process to form an oxidized surface portion on the hardmask layer; carrying out a wet chemical etching process to remove at least a portion of the oxidized surface portion to form the hardmask opening having an enlarged width and the trench opening comprising rounded upper corners; and, forming a completed planarized STI structure filled with oxide.

Method of forming an STI feature to avoid electrical charge leakage

Growing community of inventors

Hsin-Chu, Taiwan

Yih Song Chiu