Siliconware Precision Industries Co., Ltd.

Yih-Jenn Jiang

Don-Son Jiang

Chien-Ping Huang

Han-Ping Pu

Chang-Fu Lin

Cheng-Hsu Hsiao

Chun-Tang Lin

Fang-Lin Tsai

Jung-Pang Huang

Meng-Huan Chia

Kuan-Wei Chuang

Pei-Geng Weng

Hui-Min Huang

Wei-Son Tsai

Meng-Tsung Lee

Po-Yi Wu

Ting-Yang Chou

Chien-Lung Chuang

Chia-Yu Kuo

A substrate structure is provided with a first electrical contact pad formed on an insulating layer of a substrate body, where the first electrical contact pad includes a first pad portion disposed on the insulating layer and at least one first protruding portion embedded in the insulating layer, so that the first pad portion is electrically connected to a circuit layer in the insulating layer by a conductive blind via, and the first protruding portion is free from being electrically connected to the circuit layer, such that, through a design of the first protruding portion, all surfaces of a metal layer formed on the insulating layer can meet the requirement of coplanarity.

Substrate structure

An electronic package is provided, in which a first electronic element and a second electronic element are disposed on a first side of a circuit structure and a second side of the circuit structure, respectively, where a first metal layer is formed between the first side of the circuit structure and the first electronic element, a second metal layer is formed on a surface of the second electronic element, and at least one thermally conductive pillar is disposed on the second side of the circuit structure and extends into the circuit structure to thermally conduct the first metal layer and the second metal layer. Therefore, through the thermally conductive pillar, heat generated during operations of the first electronic element and the second electronic element can be quickly dissipated to an external environment and would not accumulate.

Electronic package and manufacturing method thereof

An electronic package is provided, and the manufacturing method of which is to form a plurality of conductive pillars and dispose an electronic element on a first circuit structure, then cover the plurality of conductive pillars and the electronic element with a cladding layer, and then form a second circuit structure on the cladding layer, so that the plurality of conductive pillars are electrically connected to the first circuit structure and the second circuit structure, and the electronic element is electrically connected to the first circuit structure, where a fan-out redistribution layer is configured in the first circuit structure and the second circuit structure, and at least one ground layer is configured in the second circuit structure. Further, the ground layer includes a plurality of sheet bodies arranged in an array, so that at least one slot is disposed between every two adjacent sheet bodies.

An electronic package is provided, where a circuit layer and a metal layer having a plurality of openings are formed on a dielectric layer of a circuit portion to reduce the area ratio of the metal layer to the dielectric layer, so as to reduce stress concentration and prevent warping of the electronic package.

Electronic package and circuit structure thereof

A packaging substrate includes a base body having at least a conductive pad on a surface thereof, a dielectric layer formed on the surface of the base body and having at least a first opening for exposing the conductive pad and at least a second opening formed at a periphery of the first opening, and a metal layer formed on the conductive pad and the dielectric layer and extending to a sidewall of the second opening, thereby effectively eliminating side-etching of the metal layer under a solder bump.

Fabrication method of packaging substrate

A semiconductor package includes: a chip having an active surface with a plurality of electrode pads and an inactive surface opposite to the active surface; an encapsulant encapsulating the chip and having opposite first and second surfaces, the first surface being flush with the active surface of the chip; and first and second metal layers formed on the second surface of the encapsulant, thereby providing a rigid support to the overall structure to prevent warpage and facilitating heat dissipation of the overall structure.

Fabrication method of semiconductor package

Semiconductor package and fabrication method thereof

A semiconductor package and a fabrication method are disclosed. The fabrication method includes applying a sacrificial layer on one surface of a metal carrier, applying an insulation layer on the sacrificial layer, and forming through holes in the sacrificial layer and the insulation layer to expose the metal carrier; forming a conductive metallic layer in each through hole; forming a patterned circuit layer on the insulation layer to be electrically connected to the conductive metallic layer; mounting at least a chip on the insulation layer and electrically connecting the chip to the patterned circuit layer; forming an encapsulant to encapsulate the chip and the patterned circuit layer; and removing the metal carrier and the sacrificial layer to expose the insulation layer and conductive metallic layer to allow the conductive metallic layer to protrude from the insulation layer. In the present invention, the distance between the semiconductor package and the external device is increased, and thermal stress caused by difference between the thermal expansion coefficients is reduced, so as to enhance the reliability of the product.

Growing community of inventors

Taichung, Taiwan

Yih-Jenn Jiang