Samsung Electronics Co., Ltd.

Yigwon Kim

Sangjin Kim

Hoon Tae Kim

Suhyun Kim

Kwangsub Yoon

Jinseok Heo

Taemin Choi

Heebom Kim

Narak Choi

Heeyoung Go

Bumjoon Youn

Hong-Seock Choi

Jimyung Kim

Yongchul Jeong

Jinhee Jang

A method of forming a pattern includes forming an etching object layer on a substrate. A photoresist layer including a metal, oxygen and an organic material is formed on the etching object layer. An exposure process is performed on the photoresist layer. A developing process is performed on the photoresist layer to form a photoresist pattern including a metal oxide. Ozone is provided onto the substrate to remove a residue of the photoresist layer that includes the organic material. The etching object layer is etched using the photoresist pattern as an etching mask.

Method of forming a pattern

Disclosed are photomasks, methods of fabricating the same, and methods of manufacturing semiconductor devices using the same. The photomask comprises a substrate including a pattern region and a peripheral region around the pattern region, a reflection layer on the pattern region and extending onto the peripheral region, an absorption structure on the reflection layer, and a dielectric pattern on the absorption structure on the peripheral region and exposing the absorption structure on the pattern region.

Photomask, method of fabricating the same, and method of manufacturing semiconductor device using the same

A semiconductor device includes a circuit pattern on a substrate, a shielding pattern on the circuit pattern and constituted by a plurality of parallel bars, and lower overlay marking on the shielding pattern and constituted by a plurality of parallel bars which define parallel slits between the bars. The pitch of the bars of the shielding pattern is smaller than the pitch of the bars of the lower overlay marking.

Semiconductor devices having shielding pattern

Growing community of inventors

Hwaseong-si, South Korea

Yigwon Kim