Tokyo Electron Limited

Yicheng Li

Takeshi Sakuma

Takashi Shigeoka

Lin Sha

Toshio Takagi

Shou-Qian Shao

Shouqian Shao

A method, computer readable medium, and system for vapor deposition on a substrate that maintain a first assembly of the vapor deposition system at a first temperature, maintain a second assembly of the vapor deposition system at a reduced temperature lower than the first temperature, dispose the substrate in a process space of the first assembly that is vacuum isolated from a transfer space in the second assembly, and deposit a material on the substrate. As such, the system includes a first assembly having a process space configured to facilitate material deposition, a second assembly coupled to the first assembly and having a transfer space to facilitate transfer of the substrate into and out of the deposition system, a substrate stage connected to the second assembly and configured to support the substrate, and a sealing assembly configured to separate the process space from the transfer space. The first assembly is configured to be maintained at a first temperature and the second assembly is configured to be maintained at a reduced temperature lower than the first temperature.

Method and system for sealing a first assembly to a second assembly of a processing system

A method, computer readable medium, and system for treating a substrate in a process space of a processing system that is vacuum isolated from a transfer space of the processing system is described. A sealing device is disposed between a first chamber assembly configured to define the process space and a second chamber assembly configured to define the transfer space. When the sealing device is engaged, vacuum isolation is provided between the process space and the transfer space. The sealing device comprises two or more contact ridges with one or more pockets formed therebetween. When the sealing device is engaged between the first chamber assembly and the second chamber assembly, gas is trapped in the one or more pockets. This trapped gas assists the release of the sealing device upon disengagement of the sealing device between the first chamber assembly and the second chamber assembly.

Sealing device and method for a processing system

A method and system for vapor deposition on a substrate that disposes a substrate in a process space of a processing system that is isolated from a transfer space of the processing system, processes the substrate at either of a first position or a second position in the process space while maintaining isolation from the transfer space, and deposits a material on said substrate at either the first position or the second position. Furthermore, the system includes a high conductance exhaust apparatus configured to be coupled to the process space, whereby particle contamination of the substrate processed in the deposition system is minimized. The exhaust apparatus comprises a pumping system located above the substrate and an evacuation duct, wherein the evacuation duct has an inlet located below the substrate plane.

Exhaust apparatus configured to reduce particle contamination in a deposition system

A method, computer readable medium, and system for treating a substrate in a process space of a vacuum processing system is described. A vacuum pump in fluid communication with the vacuum processing system and configured to evacuate the process space, while a process material supply system is pneumatically coupled to the vacuum processing system and configured to supply a process gas to the process space. Additionally, the vacuum pump is pneumatically coupled to the process supply system and configured to, at times, evacuate the process gas supply system.

Exhaust system for a vacuum processing system

Processing chamber for manufacturing semiconductors

The single substrate thermal processing apparatus () includes a process chamber () arranged to accommodate a target substrate (W) and provided with a showerhead () disposed on its ceiling. A support member () is disposed to support the target substrate (W) so as for it to face the showerhead (), when the target substrate (W) is subjected to a semiconductor process. A heating lamp () is disposed below the support member (), for radiating light to heat the target substrate (W). The support member () and heating lamp () are moved up and down together relative to the showerhead () by an elevator mechanism (). The elevator mechanism () sets different distances between the showerhead () and heating lamp (), in accordance with the different process temperatures, thereby causing temperature change of the bottom surface of the showerhead () to fall in a predetermined range.

Sheet type heat treating apparatus and method for processing semiconductors

A thermal processing system performs predetermined thermal processing on an approximately circular to-be-processed object, by applying radiant heat to the to-be-processed object by means of a heating lamp system. The heating lamp system comprises a plurality of lamps disposed concentrically so as to correspond to the to-be-processed object. The plurality of lamps are controlled individually for respective zones of the to-be-processed object.

Thermal processing system

A thermal processing system for heating a to-be-processed object while rotating the to-be-processed object by a placement part, and for performing thermal processing on the to-be-processed object by supplying a predetermined gas into a processing chamber. An outer ring part provided outside the processing chamber and an inner ring part provided inside the processing chamber have pluralities of circumferentially arranged magnetic poles. The magnetic poles apply magnetic forces between the outer ring part and inner ring part so that the inner ring part will follow the rotation of the outer ring part. The number of magnetic poles of the outer ring part and inner ring part are selected to achieve an allowable angular error when between the outer ring part and inner ring part during rotation.

Thermal processing system and thermal processing method

A transfer apparatus () for a semiconductor processing system includes a transfer member () having a support portion () to place a target substrate (W) thereon, and a drive unit () for driving the transfer member (). A reference mark () is disposed adjacent to the support portion (). The target substrate (W) has optically observable first and second portions (). A storage section () stores a normal image that shows a positional correlation between the reference mark () and the first and second portions (), obtained when the target substrate (W) is placed on the support portion () at a normal position. An image pick-up device (A) takes a detection image that shows a positional correlation between the reference mark () and the first and second portions (), when the transfer member () transfers the target substrate (W). An information processing unit (B) obtains a misalignment amount of the target substrate (W) relative to the normal position, based on the normal image and the detection image.

Transfer apparatus and method for semiconductor process and semiconductor processing system

A thermal process apparatus for a semiconductor substrate, including a heating source heating the semiconductor substrate by irradiating a light on one side of the semiconductor substrate, a reflection plate facing to the semiconductor substrate in a state where a reflection cavity is formed with another side of the semiconductor substrate, a thermometer having a light-receiving part provided on the refection plate so as to measure a temperature of the semiconductor substrate by catching a radiation beam from the semiconductor substrate heated by the heating source by the light-receiving part; and light absorption means provided around the light-receiving part for absorbing a diffuse reflection light generated in the reflection cavity.

Thermal process apparatus for a semiconductor substrate

A single-substrate-heat-processing apparatus includes an airtight process chamber, the interior of which is partitioned into a process space and a lower space by a mount plate and a shield frame. Heating lamps are disposed at a position outside the process chamber and below the mount plate. The mount plate is supported by a shield frame via an isolator, which has a thermal conductivity lower than that of the mount plate. The isolator is formed of a lower member and an upper member. The upper member has outer and inner cover portions, which cover the inner edge of the shield frame and the outer edge of the mount plate, respectively, in a non-contacting state.

Single-substrate-heat-processing apparatus for semiconductor process

A quartz window decreases an amount of absorption of heat from a heat source while maintaining a pressure difference between the pressure inside a process chamber and an atmospheric pressure. The process chamber defines a process space for processing an object to be processes. A placement stage is provided in the process chamber so as to place the object to be processed thereon. A gas supply part which supplies to the process chamber a process gas for processing the object to be processed. The quartz window is provided as a part of the process chamber so that the quartz window is opposite to the object to be processed placed on the placement stage. A heating unit has a heat radiation lamp provided on an opposite side of the process chamber with respect to the light-transmitting window. The quartz window constitutes a convex lens part which is formed on a periphery of the quartz window and protrudes into the process space.

Heat treatment apparatus having a thin light-transmitting window

A thermal processing apparatus includes a cooling water passage in a circumferential wall of a processing vessel such that the cooling water passage extends from a water inlet port to a turn-around point along the circumferential wall in a first direction and further from the turn-around point to a water exit port in a second, opposite direction.

Growing community of inventors

Kanagawa, Japan

Yicheng Li