Taiwan Semiconductor Manufacturing Comp. Ltd.

Global Unichip Corporation

Yi-Tzeng Lin

Sheng-Fan Yang

Wei-Chiao Wang

Hung-Yi Chang

Hao-Yu Tung

Wei-Hsun Liao

An interposer device comprises two bump regions, a channel region, a plurality of signal lines and a plurality of ground lines. The two bump regions are respectively coupled to two semiconductor devices. The channel region is connected between the two bump regions. The plurality of signal lines are embedded in the two bump regions and the channel region, and electrically connected to the two semiconductor devices for transmitting circuit signals. The plurality of ground lines are embedded in the two bump regions and the channel region for shielding the plurality of signal lines. In each bump region, each signal line comprises a trunk portion, a turning portion, and a signal turning point connected between the trunk portion and the turning portion. The trunk portion extends parallel to a first direction, and the turning portion extends parallel to a second direction.

Interposer device and semiconductor package structure

An interposer routing structure includes a first trace layer, a bump layer, a second trace layer and a third trace layer. The first trace layer is configured to receive a power. The bump layer is coupled to a die. The second trace layer and the third trace layer are coupled between the first trace layer and the bump layer, and include multiple ground traces and multiple power traces. The ground traces are located on both sides of at least one of the power traces, so that the ground traces isolate the at least one power trace and multiple signal traces. The power traces of the second trace layer are coupled to each other by a connecting power trace, and the ground traces of the third trace layer are coupled to each other by a connecting ground trace.

Interposer routing structure and semiconductor package

A semiconductor wiring substrate includes a first circuit layer, a second circuit layer and a first dielectric layer. The first circuit layer includes a plurality of first signal traces and a plurality of first ground traces, wherein the first signal traces and the first ground traces are alternatively arranged on the first circuit layer, and one of the first signal traces is spaced at a first spacing from adjacent one of the first ground traces. The first dielectric layer is between the first circuit layer and the second circuit layer and has a first thickness in an arrangement direction of the first circuit layer, the first dielectric layer and the second circuit layer, wherein the first spacing substantially ranges from 0.78 to 1.96 times the first thickness.

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Hsinchu, Taiwan

Yi-Tzeng Lin