Taiwan Semiconductor Manufacturing Comp. Ltd.

Yi-Li Hsiao

Chen-Hua Douglas Yu

Chih-Hang Tung

Chien Ling Hwang

Chung-Shi Liu

Su-Chun Yang

Tung-Liang Shao

Jean Wang

Ying-Jui Huang

Da-Yuan Shih

Lawrance Sheu

Mirng-Ji Lii

Yeong-Jyh Lin

Shin-Puu Jeng

Hsin-Hung Liao

Cheng-Chang Wei

Jui-Pin Hung

Bor-Ping Jang

Hsiao-Yun Chen

Ming-Da Cheng

Ching-Hua Hsieh

Chien-Ling Hwang

Tsai-Tsung Tsai

Chung-Jung Wu

Lin-Wei Wang

Lawrence Chiang Sheu

Ming-Che Ho

Kuei-Wei Huang

Jyh-Cherng Sheu

Ming-Shih Yeh

Minghsing Tsai

Po-Zen Chen

Francis Ko

Fu-Kang Tien

Li-Yen Lin

Chi-An Kao

Weng-Liang Fang

Ying-Lin Chen

Jerry Hwang

Cheng-Chieh Hung

Yu-Tsung Fu

A method includes picking up a first package component, removing an oxide layer on an electrical connector of the first package component, placing the first package component on a second package component after the oxide layer is removed, and bonding the first package component to the second package component.

Bonding with pre-deoxide process and apparatus for performing the same

An apparatus includes a semiconductor component and a cooling structure. The cooling structure is over a back side of the semiconductor component. The cooling structure includes a housing, a liquid delivery device and a gas exhaust device. The housing includes a cooling space adjacent to the semiconductor component. The liquid delivery device is connected to an inlet of the housing and is configured to deliver a liquid coolant into the cooling space from the inlet. The gas exhaust device is connected to an outlet of the housing and is configured to lower a pressure in the housing.

Method for forming a semiconductor component with a cooling structure

A bonding method of package components and a bonding apparatus are provided. The method includes: providing at least one first package component and a second package component, wherein the at least one first package component has first electrical connectors and a first dielectric layer at a bonding surface of the at least one first package component, and the second package component has second electrical connectors and a second dielectric layer at a bonding surface of the second package component; bringing the at least one first package component and the second package component in contact, such that the first electrical connectors approximate or contact the second electrical connectors; and selectively heating the first electrical connectors and the second electrical connectors by electromagnetic induction, in order to bond the first electrical connectors with the second electrical connectors.

Bonding method of package components and bonding apparatus

Semiconductor component with cooling structure

A semiconductor device includes a solder bump overlying and electrically connected to a pad region, and a metal cap layer formed on at least a portion of the solder bump. The metal cap layer has a melting temperature greater than the melting temperature of the solder bump.

Semiconductor device and bump formation process

Semiconductor devices and methods of manufacture thereof are disclosed. In some embodiments, a method of manufacturing a device includes coupling a first semiconductor device to a second semiconductor device by spacers. The first semiconductor device has first contact pads disposed thereon, and the second semiconductor device has second contact pads disposed thereon. The method includes forming an immersion interconnection between the first contact pads of the first semiconductor device and the second contact pads of the second semiconductor device.

Immersion interconnections for semiconductor devices and methods of manufacture thereof

A wafer-level pulling method includes securing a top holder to a plurality of chips. The method further includes securing a bottom holder to a wafer, wherein the plurality of chips are bonded to the wafer by a plurality of solder bumps. The method further includes softening the plurality of solder bumps. The method further includes stretching the plurality of softened solder bumps, wherein stretching the plurality of softened solder bumps comprises leveling the plurality of chips using a plurality of levelling devices separated from the plurality of chips, and a first levelling device of the plurality of levelling devices has a different structure from a second levelling device of the plurality of levelling devices.

Solder bump stretching method

An apparatus includes a spool configured to supply a wire, a cutting device configured to form a notch in the wire, and a capillary configured to bond the wire and to form a stud bump. The apparatus is further configured to pull the wire to break at the notch, with a tail region attached to the stud bump.

Methods for stud bump formation

A method includes forming a plurality of metal posts. The plurality of metal posts is interconnected to form a metal-post row by weak portions between neighboring ones of the plurality of metal posts. The weak portions include a same metal as the plurality of metal posts. A majority of each of the plurality of metal posts is separated from respective neighboring ones of the plurality of metal posts. An end portion of each of the plurality of metal posts is plated with a metal. The plurality of metal posts is disposed into a metal post-storage. The method further includes retrieving one of the metal posts from a metal-post storage, and bonding the one of the metal posts on a metal pad.

Metal post bonding using pre-fabricated metal posts

A method of producing a solder bump joint includes heating a solder bump comprising tin above a melting temperature of the solder bump, wherein the solder bumps comprises eutectic Sn&#x2014;Bi compound, and the eutectic Sn&#x2014;Bi compound is free of Ag. The method further includes stretching the solder bump to increase a height of the solder bump, wherein stretching the solder bump forms lamellar structures having a contact angle of less than 90&#xb0;. The method further includes cooling down the solder bump.

Solder bump stretching method for forming a solder bump joint in a device

A method includes moving a first bond head along a first guide apparatus for a first loop. The first guide apparatus is configured in a ring shape. The method also includes picking up a first die using the first bond head during the first loop, and aligning the first die with a first package substrate. The aligning the first die with the first package substrate includes moving the first package substrate in a first direction and a second direction. The first direction and the second direction are contained in a first plane parallel to the first loop. The method further includes placing the first die over the first package substrate during the first loop.

Pick-and-place tool for packaging process

Growing community of inventors

Hsinchu, Taiwan

Yi-Li Hsiao